N Channel Enhancement Mode Power MOSFET PJSEMI PJM10H15NTE featuring low RDSon and 100V VDS rating
Key Attributes
Model Number:
PJM10H15NTE
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.034nF
Pd - Power Dissipation:
46W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
PJM10H15NTE
Package:
TO-252
Product Description
Product Overview
The PJM10H15NTE is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% avalanche tested, RoHS compliant, and halogen and antimony free. This MOSFET is designed for power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supply systems. Its key specifications include a VDS of 100V, ID of 15A, and low RDS(on) values of < 100m @VGS=10V and < 130m @VGS=4.5V.
Product Attributes
- Brand: Pingjing Semiconductor (implied by www.pingjingsemi.com)
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 15 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 60 | A | ||
| Maximum Power Dissipation | PD | 46 | W | |||
| Single Pulse Avalanche Energy | EAS | Note2 | 20 | mJ | ||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Case | RJC | 2.7 | C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 1 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A, Note3 | 1 | 1.9 | 3 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=10A, Note3 | 81 | 100 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=8A, Note3 | 86 | 130 | m | |
| Forward Transconductance | gFS | VDS=5V,ID=2A, Note3 | 7.5 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHz | 1034 | pF | ||
| Output Capacitance | Coss | VDS=30V,VGS=0V,f=1MHz | 36 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V,f=1MHz | 35 | pF | ||
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | 2.2 | |||
| Total Gate Charge | Qg | VDS=50V,ID=10A, VGS=10V | 22 | nC | ||
| Gate-Source Charge | Qgs | VDS=50V,ID=10A, VGS=10V | 3 | nC | ||
| Gate-Drain Charge | Qg d | VDS=50V,ID=10A, VGS=10V | 6.1 | nC | ||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=50V,ID=10A, VGS=10V,RGEN=3 | 14 | nS | ||
| Turn-on Rise Time | tr | VDD=50V,ID=10A, VGS=10V,RGEN=3 | 5.5 | nS | ||
| Turn-off Delay Time | td(off) | VDD=50V,ID=10A, VGS=10V,RGEN=3 | 28 | nS | ||
| Turn-off Fall Time | tf | VDD=50V,ID=10A, VGS=10V,RGEN=3 | 5.2 | nS | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=30A | 1.2 | V | ||
| Diode Forward Current | IS | 30 | A | |||
2407301136_PJSEMI-PJM10H15NTE_C36493751.pdf
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