Epitaxial planar type PNP silicon transistor ROHM 2SB1198KT146R with low VCEsat and high breakdown voltage
Key Attributes
Model Number:
2SB1198KT146R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
180MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SB1198KT146R
Package:
TO-236-3(SOT-23-3)
Product Description
Product Overview
The 2SB1198K is a PNP silicon transistor of epitaxial planar type, designed for low-frequency applications. It features low VCE(sat) of 0.2V (Typ.) and a high breakdown voltage of BVCEO = 80V. This transistor complements the 2SD1782K and is suitable for use in ordinary electronic equipment such as audio visual, office automation, communications devices, electrical appliances, and electronic toys.
Product Attributes
- Brand: ROHM CO.,LTD.
- Structure: Epitaxial planar type PNP silicon transistor
- Material: Silicon
- Application Scenarios: Ordinary electronic equipment (audio visual, office automation, communications devices, electrical appliances, electronic toys)
Technical Specifications
| Part Number | Type | Voltage (V) | Current (A) | VCE(sat) (V) | Breakdown Voltage (V) | Package |
| 2SB1198K | Low-frequency Transistor | 80 | 0.5 | 0.2 (Typ.) | 80 | SOT-89 |
2410010401_ROHM-2SB1198KT146R_C266246.pdf
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