Low On Resistance Complementary N Channel and P Channel MOSFET PJSEMI PJM08C40PA for Power Switching
Key Attributes
Model Number:
PJM08C40PA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
29mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
112pF
Input Capacitance(Ciss):
520pF
Pd - Power Dissipation:
2W
Mfr. Part #:
PJM08C40PA
Package:
SOP-8
Product Description
Product Overview
The PJM08C40PA is a complementary N-Channel and P-Channel Power MOSFET designed for power management applications. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, halogen and antimony free, and Moisture Sensitivity Level 3. This device offers low on-resistance and is suitable for various power switching applications.
Product Attributes
- Brand: PingJingSemi
- Product Line: PJM
- Package: SOP-8
- Certifications: RoHS, Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | N-Channel | P-Channel | Unit |
| Drain-Source Voltage (VDS) | 40V | -40V | V |
| Gate-Source Voltage (VGS) | 20V | V | |
| Drain Current-Continuous (ID) | 8A | -7A | A |
| Drain Current-Pulsed (IDM) | 40A | -30A | A |
| Maximum Power Dissipation (PD) | 2W | W | |
| Junction Temperature (TJ) | 150C | C | |
| Storage Temperature Range (TSTG) | -55 to +150C | C | |
| Thermal Resistance, Junction-to-Ambient (RJA) | 62.5 C/W | C/W | |
| Static Characteristics | |||
| Drain-Source Breakdown Voltage (V(BR)DSS) | 40V | -40V | V |
| Zero Gate Voltage Drain Current (IDSS) | 1A | 1A | A |
| Gate-Body Leakage Current (IGSS) | 100nA | nA | |
| Gate Threshold Voltage (VGS(th)) | 1 - 2V | 1 - 2V | V |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V, ID=8A (N-Ch) / @ VGS=-10V, ID=-8A (P-Ch) | <19m | <35m | m |
| Drain-Source On-Resistance (RDS(on)) @ VGS=4.5V, ID=4A (N-Ch) / @ VGS=-4.5V, ID=-4A (P-Ch) | <29m | <45m | m |
| Forward Transconductance (gFS) @ VDS=5V, ID=8A (N-Ch) / @ VDS=-5V, ID=-8A (P-Ch) | 33S | 10S | S |
| Dynamic Characteristics | |||
| Input Capacitance (Ciss) @ VDS=20V, VGS=0V, f=1MHz (N-Ch) / @ VDS=-20V, VGS=0V, f=1MHz (P-Ch) | 415pF | 520pF | pF |
| Output Capacitance (Coss) | 112pF | 100pF | pF |
| Reverse Transfer Capacitance (Crss) | 11pF | 65pF | pF |
| Total Gate Charge (Qg) @ VDS=20V, ID=8A, VGS=10V (N-Ch) / @ VDS=-20V, ID=-8A, VGS=-10V (P-Ch) | 12nC | 13nC | nC |
| Gate-Source Charge (Qgs) | 3.2nC | 3.8nC | nC |
| Gate-Drain Charge (Qgd) | 3.1nC | 3.1nC | nC |
| Switching Characteristics | |||
| Turn-on Delay Time (td(on)) @ VDD=15V, RL=2.5, VGS=10V, RGEN=3 (N-Ch) / @ VDD=-20V, RL=2.3, VGS=-10V, RGEN=6 (P-Ch) | 4nS | 7.5nS | nS |
| Turn-on Rise Time (tr) | 3nS | 5.5nS | nS |
| Turn-off Delay Time (td(off)) | 15nS | 19nS | nS |
| Turn-off Fall Time (tf) | 2nS | 7nS | nS |
| Source-Drain Diode Characteristics | |||
| Diode Forward Voltage (VSD) @ VGS=0V, IS=8A (N-Ch) / @ VGS=0V, IS=-7A (P-Ch) | 0.8 - 1.2V | 1.2V | V |
| Diode Forward Current (IS) | 8A | 7A | A |
2407190958_PJSEMI-PJM08C40PA_C30187478.pdf
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