Dual N Channel Enhancement Mode Power MOSFET PJSEMI PJM9926ANPA for Power Switching Applications

Key Attributes
Model Number: PJM9926ANPA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
9A
RDS(on):
28mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
640pF@10V
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
6.5nC@4.5V
Mfr. Part #:
PJM9926ANPA
Package:
SOP-8
Product Description

Product Overview

The PJM9926ANPA is a Dual N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is designed for power switching applications, including hard switched and high frequency circuits, and uninterruptible power supplies. This RoHS and Reach compliant component is halogen and antimony free, offering excellent performance with low on-resistance.

Product Attributes

  • Brand: Pingjingsemi
  • Certifications: RoHS, Reach Compliant
  • Material: Halogen and Antimony Free

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Unit
Static CharacteristicsV(BR)DSSVGS=0V,ID=250A20----V
IDSSVDS=20V,VGS=0V----1A
IGSSVGS=10V,VDS=0V----100nA
Gate Threshold VoltageVGS(th)VDS=VGS,ID=250A0.50.71.2V
Drain-Source On-ResistanceRDS(on)VGS=4.5V,ID=6A--2428m
VGS=2.5V,ID=5A--3338m
Dynamic CharacteristicsCissVDS=10V,VGS=0V,f=1MHz--640--pF
Coss----140--pF
Crss----80--pF
Total Gate ChargeQgVDD=10V, VGS=4.5V,ID=4.3A--6.5--nC
Qgs----1.6--nC
Qgd----1.5--nC
Switching Characteristicstd(on)VDS=10V,VGS=4.5V, ID=1A RGEN=3--8--nS
tr----58--nS
td(off)----20--nS
tf----68--nS
Source-Drain Diode CharacteristicsVSDVGS=0V,IS=6A----1.2V
IS------6A
Absolute Maximum RatingsVDS--20----V
VGS--10----V
ID------6A
IDMNote1----25A
PD------1.8W
TJ----150--C
TSTG---55--+150C
RJANote2----83C/W

2405221106_PJSEMI-PJM9926ANPA_C22438611.pdf

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