High conductance POPPULA 1N4448W diode with 300 milliamp forward current and SOD123 Micro SMD package
Key Attributes
Model Number:
1N4448W
Product Custom Attributes
Reverse Leakage Current (Ir):
2.5uA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
100V
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
150mA
Mfr. Part #:
1N4448W
Package:
SOD-123
Product Description
Product Overview
The 1N4448W is a fast switching diode from POPPULA SEMICONDUCTOR, designed for general-purpose switching applications. It features a SOD123 Micro SMD package, RoHS compliant, and a matte tin lead finish. This device is ideally suited for automatic insertion and offers high conductance.
Product Attributes
- Brand: POPPULA SEMICONDUCTOR
- Origin:
- Certifications: RoHS compliant / Green EMC
- Package: SOD123 Micro SMD
- Lead Finish: Matte Tin (Sn)
- Device Marking Code: 1N4448W
Technical Specifications
| Parameter | Conditions | Value | Units |
|---|---|---|---|
| Non-Repetitive Peak Reverse Voltage (VRM) | 100 | V | |
| Repetitive Peak Reverse Voltage (VRRM) | 100 | V | |
| RMS Reverse Voltage (VR(RMS)) | 75 | V | |
| Forward Continuous Current (IFM) | 300 | mA | |
| Average Rectified Output Current (IO) | 150 | mA | |
| Non-Repetitive Peak Forward Surge Current (@t=1.0us) (IFSM) | 2.0 | A | |
| Power Dissipation (PD) | 350 | mW | |
| Junction Temperature (TJ) | 150 | ||
| Storage Temperature (TSTG) | -55 to +150 | ||
| Forward Voltage (VF) | IF = 5mA | 0.72 | V |
| Forward Voltage (VF) | IF = 10mA | 0.855 | V |
| Forward Voltage (VF) | IF = 100mA | 1.0 | V |
| Forward Voltage (VF) | IF = 150mA | 1.25 | V |
| Reverse current (IR) | VR= 75V | 2.5 | A |
| Reverse current (IR) | VR= 20V | 25 | nA |
| Capacitance (CT) | VR = 0V, f = 1MHz | 2 | pF |
| Reverse Recovery Time (trr) | IF = IR = 10mA, IRR = 1mA, RL = 100 | 4 | ns |
| Ordering Information | Device | 1N4448W | |
| Ordering Information | Package | SOD123 | |
| Ordering Information | Shipping | Tape & Reel | |
| Ordering Information | Quantity | 3000pcs /7 Reel | |
| Ordering Information | Tape wide | 8 mm | |
| Ordering Information | Emboss pitch | 4 mm |
2505271725_POPPULA-1N4448W_C46533152.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
