Low on state resistance PIELENST AO3415-L P Channel MOSFET suitable for power management applications
Key Attributes
Model Number:
AO3415-L
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
4.8A
Operating Temperature -:
-
RDS(on):
65mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
675pF
Gate Charge(Qg):
14.2nC@4.5V
Mfr. Part #:
AO3415-L
Package:
SOT-23
Product Description
Product Overview
The AO3415-L is a P-Channel MOSFET designed for various applications. It offers key electrical characteristics such as low on-state resistance and specified breakdown voltage, making it suitable for power management tasks.
Product Attributes
- Brand: SZPIELENST
- Package: SOT23
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| VDS | -20 | V | |||
| ID | -4.8 | A | |||
| RDS(ON) | VGS = -4.5V | 45 | m | ||
| RDS(ON) | VGS = -2.5V | 65 | m | ||
| VGS | 8 | V | |||
| V(BR)DSS | -20 | V | |||
| TJ | Maximum Junction Temperature | 150 | C | ||
| TSTG | Storage Temperature Range | -50 | 150 | C | |
| IDM | Pulse Drain Current Tested (TA=25C) | -30 | A | ||
| ID | Continuous Drain Current (TA=25C) | -4.8 | A | ||
| ID | Continuous Drain Current (TA=70C) | -3.6 | A | ||
| PD | Maximum Power Dissipation (TA=25C) | 1.5 | W | ||
| PD | Maximum Power Dissipation (TA=70C) | 1.0 | W | ||
| JA | Thermal Resistance Junction-Ambient (Mounted on Large Heat Sink) | 80 | C/W | ||
| Electrical Characteristics | |||||
| V(BR)DSS | VGS=0V, ID=-250A | -20 | V | ||
| IDSS | Zero Gate Voltage Drain Current (TA=25) VDS=-20V, VGS=0V | -1 | A | ||
| IDSS | Zero Gate Voltage Drain Current (TA=125) VDS=-16V, VGS=0V | -100 | uA | ||
| IGSS | Gate-Body Leakage Current VGS=8V, VDS=0V | 10 | A | ||
| VGS(TH) | Gate Threshold Voltage VDS=VGS, ID=-250A | -0.4 | -0.7 | -1.2 | V |
| RDS(ON) | Drain-Source On-State Resistance VGS=-4.5V, ID=-4A | 37 | 45 | m | |
| RDS(ON) | Drain-Source On-State Resistance VGS=-3.3V, ID=-3A | 43 | 55 | m | |
| RDS(ON) | Drain-Source On-State Resistance VGS=-2.5V, ID=-2A | 52 | 65 | m | |
| Dynamic Electrical Characteristics | |||||
| Ciss | Input Capacitance VDS=-10V, VGS=0V, f=1MHz | 675 | pF | ||
| Coss | Output Capacitance | 120 | pF | ||
| Crss | Reverse Transfer Capacitance | 85 | pF | ||
| Qg | Total Gate Charge VDS=-10V, ID=-4A, VGS=-4.5V | 14.2 | nC | ||
| Qgs | Gate Source Charge | 3.2 | nC | ||
| Qgd | Gate Drain Charge | 5.8 | nC | ||
| Switching Characteristics | |||||
| td(on) | Turn on Delay Time VDD=-10V, ID=-2A, RG=3.3, VGS=-4.5V | 15 | ns | ||
| tr | Turn on Rise Time | 11 | ns | ||
| td(off) | Turn Off Delay Time | 22 | ns | ||
| tf | Turn Off Fall Time | 35 | ns | ||
| Source Drain Diode Characteristics | |||||
| ISD | Source drain current(Body Diode) TA=25 | -2 | A | ||
| VSD | Forward on voltage TJ=25, ISD=-2A, VGS=0V | -0.83 | -1.2 | V | |
2411011350_PIELENST-AO3415-L_C41376489.pdf
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