Fast Switching Schottky Rectifier PJSEMI BAS40DB Suitable for Various Electronic Circuit Applications
Key Attributes
Model Number:
BAS40DB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
250mA
Reverse Leakage Current (Ir):
200nA@30V
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
200mA
Mfr. Part #:
BAS40DB
Package:
DFN1006-2L
Product Description
Product Overview
The BAS40DB Schottky Barrier Rectifiers offer low forward voltage and fast switching capabilities, making them suitable for various electronic applications. They are designed for efficient rectification with minimal power loss.
Product Attributes
- Brand: Pingjingsemi
- Model: BAS40DB
- Package: DFN1x0.6-2L
- Cathode Marking Code: B4
Technical Specifications
| Parameter | Symbols | Value | Unit | Conditions |
| Repetitive Peak Reverse Voltage | VRRM | 40 | V | |
| Average Rectified Forward Current | IF(AV) | 200 | mA | |
| Non-Repetitive Peak Forward Surge Current | IFSM | 250 | mA | at 8.3ms |
| Power Dissipation | PD | 120 | mW | |
| Thermal Resistance Junction to Ambient Air | RJA | 833 | C/W | |
| Junction Temperature | TJ | 125 | C | |
| Storage Temperature Range | TSTG | -55 to +125 | C | |
| Forward Voltage | VF | 0.38 | V | at IF = 1 mA |
| Forward Voltage | VF | 1 | V | at IF = 40 mA |
| Reverse Current | IR | 0.2 | A | at VR = 30 V |
| Breakdown Voltage | VR(BR) | 40 | V | at IR =10 A |
| Total Capacitance | CT | 5 | pF | at VR = 0 V, f = 1 MHz |
| Reverse Recovery Time | Trr | 5 | ns | at IF = IR = 5 mA, Irr = 0.1xIR, RL = 100 |
2204211715_PJSEMI-BAS40DB_C3000407.pdf
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