P Channel Enhancement Mode Power MOSFET PJSEMI PJM13P40PA for Load Switching and PWM Applications
Key Attributes
Model Number:
PJM13P40PA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
13A
RDS(on):
9mΩ@10V;13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
315pF
Number:
1 P-Channel
Output Capacitance(Coss):
370pF
Pd - Power Dissipation:
3.5W
Input Capacitance(Ciss):
3.8nF
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
PJM13P40PA
Package:
SOP-8
Product Description
Product Overview
The PJM13P40PA is a P-Channel Enhancement Mode Power MOSFET designed for load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant. This device is halogen and antimony free with a Moisture Sensitivity Level 3.
Product Attributes
- Brand: PingJingSemi
- Model: PJM13P40PA
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 40 | V | |||
| Gate-Source Voltage | -VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 13 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 48 | A | ||
| Maximum Power Dissipation | PD | 3.5 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Maximum Junction-to-Ambient | RθJA | Note2 | 36 | °C/W | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250µA | 40 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-40V,VGS=0V | -- | -- | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250µA | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-10V,ID=-10A | -- | 9 | 14.3 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-4.5V,ID=-10A | -- | 13 | 22 | mΩ |
| Forward Transconductance | gFS | Note3, VDS=-5V,ID=-4A | -- | 22 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | -- | 3800 | -- | pF |
| Output Capacitance | Coss | -- | 370 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 315 | -- | pF | |
| Gate Resistance | Rg | VDS=0V,, f=1MHz | -- | 5 | -- | Ω |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-20V,VGS=-10V ID=-12A, RGEN=2.5Ω | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | -- | 21 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 53 | -- | nS | |
| Turn-off Fall Time | tf | -- | 29 | -- | nS | |
| Total Gate Charge | Qg | VDS=-20V,VGS=-10V ID=-12A | -- | 42 | -- | nC |
| Gate-Source Charge | Qgs | -- | 7.3 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 8.5 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3, VGS=0V,IS=-10A | -- | 0.8 | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 13 | A |
2506041705_PJSEMI-PJM13P40PA_C49021818.pdf
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