Silicon Carbide FET UJ4C075018K4S 750V 18m Ohm TO2474L Package Ideal for Power Switching Applications
Product Overview
The UJ4C075018K4S is a 750V, 18m G4 SiC FET designed for high-efficiency power switching applications. Utilizing a unique cascode configuration combining a normally-on SiC JFET with a Si MOSFET, it offers normally-off operation with standard gate-drive characteristics. This makes it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO-247-4L package, it features ultra-low gate charge, exceptional reverse recovery, and low body diode forward voltage, making it ideal for switching inductive loads and applications requiring standard gate drive. Key applications include switch mode power supplies, PV inverters, EV charging, power factor correction modules, motor drives, and induction heating.
Product Attributes
- Brand: UnitedSiC
- Material: Silicon Carbide (SiC) FET
- Package: TO-247-4L
Technical Specifications
| Parameter | Test Conditions | Value | Units |
|---|---|---|---|
| Part Number | UJ4C075018K4S | ||
| Drain-source breakdown voltage (BVDS) | VGS=0V, ID=1mA | 750 | V |
| Drain-source on-resistance (RDS(on)) | VGS=12V, ID=20A, TJ=25C | 18 | m |
| Drain-source on-resistance (RDS(on)) | VGS=12V, ID=20A, TJ=175C | 23 | m |
| Gate threshold voltage (VG(th)) | VDS=5V, ID=10mA | 4.8 | V |
| Total gate charge (QG) | VDS=400V, ID=50A, VGS = 0V to15V | 37.8 | nC |
| Excellent reverse recovery (Qrr) | VDS=400V, IS=50A, VGS=-0V, RG_EXT=50W, di/dt=1300A/ms, TJ=25C | 102 | nC |
| Low body diode VFSD | VGS=0V, IF=20A, TJ=25C | 1.14 | V |
| Operating temperature (TJ,max) | 175 | C | |
| Maximum lead temperature for soldering | 1/8 from case for 5 seconds | 250 | C |
| Thermal resistance, junction-to-case (RqJC) | 0.39 | C/W | |
| Pulsed drain current (IDM) | TC = 25C | 205 | A |
| Continuous drain current (ID) | TC = 100C | 81 | A |
| Power dissipation (Ptot) | TC = 25C | 385 | W |
2411272256_Qorvo-UJ4C075018K4S_C7136813.pdf
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