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quality 1700V Silicon Carbide FET Qorvo UF3C170400K3S designed for power conversion and inductive load switching factory
quality 1700V Silicon Carbide FET Qorvo UF3C170400K3S designed for power conversion and inductive load switching factory

1700V Silicon Carbide FET Qorvo UF3C170400K3S designed for power conversion and inductive load switching

Key Attributes
Model Number: UF3C170400K3S
Product Custom Attributes
Drain To Source Voltage:
1.7kV
Current - Continuous Drain(Id):
7.6A
Type:
N-Channel
Pd - Power Dissipation:
100W
Mfr. Part #:
UF3C170400K3S
Package:
TO-247-3
Product Description

UnitedSiC UF3C170400K3S SiC FET

Product Overview

The UnitedSiC UF3C170400K3S is a 1700V, 410mW Silicon Carbide (SiC) FET device designed for high-efficiency power conversion applications. It features a unique cascode circuit configuration combining a normally-on SiC JFET with a Si MOSFET, resulting in a normally-off SiC FET with standard gate-drive characteristics. This design allows for a direct 'drop-in replacement' for existing Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. The UF3C170400K3S offers ultra-low gate charge, exceptional reverse recovery, and low intrinsic capacitance, making it ideal for switching inductive loads and applications requiring standard gate drive. Its ESD protection (HBM class 2) and high maximum operating temperature of 175C contribute to its robustness and reliability.

Product Attributes

  • Brand: UnitedSiC
  • Material: Silicon Carbide (SiC)
  • Package Type: TO-247-3L
  • Certifications: ESD protected, HBM class 2
  • Revision: Rev. A
  • Date: January 2020

Technical Specifications

Parameter Symbol Test Conditions Value Units
Drain-source voltage VDS 1700 V
Gate-source voltage VGS -25 to +25 V
Pulsed drain current IDM TC = 25C 14 A
Single pulsed avalanche energy EAS L=15mH, IAS =1.25A 11.7 mJ
Power dissipation Ptot TC = 25C 100 W
Maximum junction temperature TJ,max 175 C
Operating and storage temperature TJ, TSTG -55 to 175 C
Max. lead temperature for soldering, 1/8 from case for 5 seconds TL 250 C
Thermal resistance, junction-to-case RqJC 1.2 - 1.5 C/W
Drain-source breakdown voltage BVDS VGS=0V, ID=1mA 1700 V
Total drain leakage current IDSS VDS=1700V, VGS=0V, TJ=25C 1.5 A
Total drain leakage current IDSS VDS=1700V, VGS=0V, TJ=175C 60 A
Total gate leakage current IGSS VDS=0V, TJ=25C, VGS=-20V / +20V 20 nA
Gate threshold voltage VG(th) VDS=5V, ID=10mA 3 - 4.7 V
Gate resistance RG f=1MHz, open drain 4.1
Drain-source on-resistance RDS(on) VGS=12V, ID=5A, TJ=25C 410 m
Drain-source on-resistance RDS(on) VGS=12V, ID=5A, TJ=175C 515 m
Diode continuous forward current IS TC=25C 7.6 A
Diode pulse current IS,pulse TC=25C 14 A
Forward voltage VFSD VGS=0V, IF=2A, TJ=25C 1.5 - 1.75 V
Forward voltage VFSD VGS=0V, IF=2A, TJ=175C 2.4 V
Reverse recovery charge Qrr VR=1200V, IF=5A, VGS=-5V, RG_EXT=10W, di/dt=4000A/ms, TJ=25C 70 nC
Reverse recovery time trr VR=1200V, IF=5A, VGS=-5V, RG_EXT=10W, di/dt=4000A/ms, TJ=25C 29 ns
Reverse recovery charge Qrr VR=1200V, IF=5A, VGS=-5V, RG_EXT=10W, di/dt=4000A/ms, TJ=150C 67 nC
Reverse recovery time trr VR=1200V, IF=5A, VGS=-5V, RG_EXT=10W, di/dt=4000A/ms, TJ=150C 27 ns
Input capacitance Ciss VDS=100V, VGS=0V, f=100kHz 740 pF
Output capacitance Coss VDS=100V, VGS=0V, f=100kHz 270 pF
Reverse transfer capacitance Crss VDS=100V, VGS=0V, f=100kHz 5.5 pF
Effective output capacitance, energy related Coss(er) VDS=0V to 1200V, VGS=0V 15.5 pF
Effective output capacitance, time related Coss(tr) VDS=1200V, VGS=0V 28 pF
Total gate charge QG VDS=1200V, ID=5A, VGS = -5V to 15V 27.5 nC
Gate-source charge QGS VDS=1200V, ID=5A, VGS = -5V to 15V 10 nC
Gate-drain charge QGD VDS=1200V, ID=5A, VGS = -5V to 15V 6.5 nC
Turn-on delay time td(on) VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C 17 ns
Rise time tr VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C 13 ns
Turn-off delay time td(off) VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C 34 ns
Fall time tf VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C 27 ns
Turn-on energy EON VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C 189 mJ
Turn-off energy EOFF VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C 43 mJ
Total switching energy ETOTAL VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=25C 232 mJ
Turn-on delay time td(on) VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C 17 ns
Rise time tr VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C 11 ns
Turn-off delay time td(off) VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C 35 ns
Fall time tf VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C 28 ns
Turn-on energy EON VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C 158 mJ
Turn-off energy EOFF VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C 50 mJ
Total switching energy ETOTAL VDS=1200V, ID=5A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V and RG = 10W, TJ=150C 208 mJ
COSS stored energy EOSS VDS=0V to 1200V, VGS=0V 11.2 mJ

Typical Applications

  • EV charging
  • PV inverters
  • Switch mode power supplies
  • Power factor correction modules
  • Motor drives
  • Induction heating

2412111338_Qorvo-UF3C170400K3S_C6902874.pdf

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