Low gate charge P Channel MOSFET PJSEMI PJM07P20SA ideal for load switching and PWM power applications
Key Attributes
Model Number:
PJM07P20SA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
231pF
Number:
1 P-Channel
Output Capacitance(Coss):
242pF
Input Capacitance(Ciss):
2nF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
15.3nC@10V
Mfr. Part #:
PJM07P20SA
Package:
SOT-23
Product Description
Product Overview
The PJM07P20SA is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and a high-density cell design for ultra-low RDS(ON), making it ideal for load switching and PWM applications. This MOSFET offers robust performance with a VDS of -20V and ID of -7A, and an RDS(on) as low as 28m at VGS=-10V.
Product Attributes
- Brand: PingJingSemi
- Package: SOT-23
- Revision: 4.0
- Date: Oct-2022
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Drain Current-Continuous | -ID | 7 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 28 | A | ||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | C | |
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-20V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note2, VDS=VGS,ID=-250A | 0.4 | 0.7 | 1.0 | V |
| Drain-Source On-Resistance | RDS(on) | Note2, VGS=-10V,ID=-4.1A | -- | 17 | 28 | m |
| Drain-Source On-Resistance | RDS(on) | Note2, VGS=-4.5V,ID=-3A | -- | 20 | 35 | m |
| Forward Transconductance | gFS | Note2, VDS=-5V,ID=-2A | -- | 10 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | -- | 2000 | -- | pF |
| Output Capacitance | Coss | -- | 242 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 231 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-10V, ID=-7A, VGS=-4.5V, RGEN=2.5 | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | -- | 31 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 28 | -- | nS | |
| Turn-off Fall Time | tf | -- | 8 | -- | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=-10V, VGS=-4.5V,ID=-3A | -- | 15.3 | -- | nC |
| Gate-Source Charge | Qgs | -- | 2.2 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 4.4 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | VGS=0V,IS=-7A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | -- | -- | 7 | A | |
2410010402_PJSEMI-PJM07P20SA_C2856842.pdf
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