P Channel Power MOSFET PJSEMI PJM2309PSC with low on resistance and 20V gate source voltage rating
Key Attributes
Model Number:
PJM2309PSC
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@10V;280mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 P-Channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
850pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
PJM2309PSC
Package:
SOT-23
Product Description
PJM2309PSC P-Channel Power MOSFET
The PJM2309PSC is a P-Channel Power MOSFET designed for load switching and PWM applications, offering efficient power management. It features a VDS of -60V, ID of -4A, and a low RDS(ON) of 180m (max) at -10V. This device is halogen and antimony-free, making it an environmentally conscious choice.
Product Attributes
- Brand: PingJingSemi
- Certifications: Halogen and Antimony Free
- Package: SOT-23-3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | TA =25 | 60 | V | ||
| Gate-Source Voltage | VGS | TA =25 | 20 | V | ||
| Continuous Drain Current | -ID | TA =25 | 4 | A | ||
| Pulsed Drain Current | -IDM | Note1 | 20 | A | ||
| Power Dissipation | PD | TA =25 | 1.4 | W | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Ambient | RJA | Note2 | 89 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | -V(BR)DSS | VGS = 0V, ID=-250A | 60 | V | ||
| Drain to Source Leakage Current | -IDSS | VDS =-60V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | -VGS(th) | Note3, VDS =VGS, ID =-250A | 1.5 | 3 | V | |
| Drain-source on-resistance | RDS(on) | Note3, VGS =-10V, ID =-2A | 180 | m | ||
| Drain-source on-resistance | RDS(on) | Note3, VGS =-4.5V, ID =-1A | 280 | m | ||
| Forward transconductance | gFS | Note3, VDS =-5V, ID =-2A | 6 | S | ||
| Dynamic characteristics | ||||||
| Input Capacitance | Ciss | VDS = -30V,VGS = 0V,f=1MHz | 850 | pF | ||
| Output Capacitance | Coss | VDS = -30V,VGS = 0V,f=1MHz | 65 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = -30V,VGS = 0V,f=1MHz | 28 | pF | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | ID=-1AVDD=-30V, VGS=-10VRGEN =3, RL =7.5 | 7 | ns | ||
| Turn-on rise time | tr | ID=-1AVDD=-30V, VGS=-10VRGEN =3, RL =7.5 | 3 | ns | ||
| Turn-off delay time | td(off) | ID=-1AVDD=-30V, VGS=-10VRGEN =3, RL =7.5 | 28 | ns | ||
| Turn-off fall time | tf | ID=-1AVDD=-30V, VGS=-10VRGEN =3, RL =7.5 | 5.5 | ns | ||
| Total gate charge | Qg | VDD =-30V,VGS =-10V,ID =-2A | 5.5 | nC | ||
| Gate-source charge | Qgs | VDD =-30V,VGS =-10V,ID =-2A | 2.5 | nC | ||
| Gate-drain charge | Qgd | VDD =-30V,VGS =-10V,ID =-2A | 6 | nC | ||
| Source-Drain Diode characteristics | ||||||
| Diode Forward voltage | -VSD | VGS =0V, IS=-4A | 1.2 | V | ||
2101071837_PJSEMI-PJM2309PSC_C2683747.pdf
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