Load switching MOSFET PJSEMI PJM10H10NSC N Channel Enhancement Mode with 10A ID and 100V VDS rating
Key Attributes
Model Number:
PJM10H10NSC
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
140mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
40pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
610pF
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
PJM10H10NSC
Package:
SOT-23-3
Product Description
Product Overview
The PJM10H10NSC is an N-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications. It offers excellent RDS(on) and low gate charge, with key specifications including a VDS of 100V and an ID of 10A. This component is housed in a SOT-23-3 package.
Product Attributes
- Brand: PingJingSemi
- Package: SOT-23-3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=5A | -- | 92 | 110 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=3A | -- | 99 | 140 | m |
| Forward Transconductance | gFS | VDS=5V,ID=8A | -- | 11 | -- | S |
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 610 | -- | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V,f=1MHz | -- | 40 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f=1MHz | -- | 25 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=30V, ID=10A, VGS=10V,RG=1.8 | -- | 7 | -- | nS |
| Turn-on Rise Time | tr | VDD=30V, ID=10A, VGS=10V,RG=1.8 | -- | 5 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=30V, ID=10A, VGS=10V,RG=1.8 | -- | 16 | -- | nS |
| Turn-off Fall Time | tf | VDD=30V, ID=10A, VGS=10V,RG=1.8 | -- | 6 | -- | nS |
| Total Gate Charge | Qg | VDS=30V,ID=5A, VGS=10V | -- | 12 | -- | nC |
| Gate-Source Charge | Qgs | VDS=30V,ID=5A, VGS=10V | -- | 2.2 | -- | nC |
| Gate-Drain Charge | Qg | VDS=30V,ID=5A, VGS=10V | -- | 2.5 | -- | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=6A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | -- | -- | -- | 10 | A |
| Drain Current-Continuous | ID | -- | -- | -- | 10 | A |
| Drain Current-Pulsed | IDM | Note1 | -- | -- | 40 | A |
| Maximum Power Dissipation | PD | -- | -- | -- | 1.2 | W |
| Junction Temperature | TJ | -- | -- | -- | 150 | C |
| Storage Temperature Range | TSTG | -- | -55 | -- | +150 | C |
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | -- | 104 | -- | C/W |
2409302003_PJSEMI-PJM10H10NSC_C41348044.pdf
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