Fast switching diode R O BAS416 featuring solder plated terminals and 250 milliwatt power dissipation
Key Attributes
Model Number:
BAS416
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
5nA
Reverse Recovery Time (trr):
3ns
Diode Configuration:
Independent
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
85V
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAS416
Package:
SOD-323
Product Description
Product Overview
The BAS416 is a fast switching diode designed for high-speed applications. It offers a fast switching time (TRR < 4nS), a power dissipation of 250mW, and high stability and reliability. This diode is suitable for small signal switching and ultra-high-speed switching applications.
Product Attributes
- Brand: (Hongjiacheng)
- Origin: Zhuhai Hongjiacheng Technology co., Ltd
- Case: SOD-323
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Cathode line denotes the cathode end
- Molding compound meets UL 94V-0 flammability rating
- RoHS-compliant
- Halogen-free
Technical Specifications
| Parameter | Symbol | Unit | Value | Test Conditions |
| Maximum repetitive peak reverse voltage | VRRM | V | 85 | |
| Maximum RMS Voltage | VRMS | V | 75 | |
| Reverse Breakdown voltage | V(BR)R | V | 100 | @IR=100A |
| Maximum Average Forward Rectified Current | IF(AV) | mA | 200 | |
| Non-Repetitive Peak forward surge current | IFSM | A | 4.0 | @tp=1s |
| Non-Repetitive Peak forward surge current | IFSM | A | 1.0 | @tp=1ms |
| Non-Repetitive Peak forward surge current | IFSM | A | 0.5 | @tp=1s |
| Power Dissipation | Pd | mW | 250 | |
| Storage temperature | Tstg | -55 ~+150 | ||
| Junction temperature | Tj | 150 | ||
| Typical thermal resistance | RJ-A | /W | 450 | |
| Maximum instantaneous forward voltage | VF | V | 0.90 | IF=1.0mA (Typical) |
| Maximum instantaneous forward voltage | VF | V | 1.0 | IF=10mA (Typical) |
| Maximum instantaneous forward voltage | VF | V | 1.1 | IF=50mA (Typical) |
| Maximum instantaneous forward voltage | VF | V | 1.25 | IF=150mA (Typical) |
| Reverse Leakage Current | IR | nA | 5.0 | VR=75V (Typical) |
| Reverse Leakage Current | IR | A | 80 | VR=75V;Tj=150 (Typical) |
| Total capacitance | CT | pF | 2.0 | VR=0V,f=1MHz (Typical) |
| Maximum reverse recovery time | Trr | ns | 3.0 | IF=IR=10mA,Irr=0.1IR, RL=100 (Max) |
| Maximum reverse recovery time | Trr | ns | 0.8 | IF=IR=10mA,Irr=0.1IR, RL=100 (Type) |
2506261420_R-O-BAS416_C7502719.pdf
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