Low RDS on P Channel MOSFET PJSEMI PJM05P40SA Featuring RoHS Reach Compliance and Halogen Antimony Free Material
Key Attributes
Model Number:
PJM05P40SA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
5A
RDS(on):
117mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
515pF@20V
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
PJM05P40SA
Package:
SOT-23
Product Description
Product Overview
The PJM05P40SA is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is RoHS and Reach Compliant, and Halogen and Antimony Free, making it suitable for various load switch, PWM, and power management applications. This device offers a VDS of -40V and an ID of -5A, with low RDS(on) ratings of < 88m @VGS= -10V and < 117m @VGS= -4.5V.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant
- Material: Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | -ID | 5 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 104 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 40 | V | ||
| Zero Gate Voltage Drain Current | -IDSS | VDS=-40V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250A | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS= -10V,ID= -3A | 68 | 88 | m | |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS= -4.5V,ID= -2A | 85 | 117 | m | |
| Forward Transconductance | gFS | Note3, VDS=-5V,ID=-1A | 4.5 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-20V,VGS=0V,f=1MHz | 515 | pF | ||
| Output Capacitance | Coss | VDS=-20V,VGS=0V,f=1MHz | 48 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-20V,VGS=0V,f=1MHz | 40 | pF | ||
| Gate Resistance | RG | VDS=0V,VGS=0V,f=1MHz | 10.8 | |||
| Total Gate Charge | Qg | VDS=-20V,ID=-3A,VGS=-10V | 10 | nC | ||
| Gate-Source Charge | Qgs | VDS=-20V,ID=-3A,VGS=-10V | 2 | nC | ||
| Gate-Drain Charge | Qg | VDS=-20V,ID=-3A,VGS=-10V | 1.6 | nC | ||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-20V, ID=-5A, VGS=-10V,RGEN=2.4 | 7 | nS | ||
| Turn-on Rise Time | tr | VDD=-20V, ID=-5A, VGS=-10V,RGEN=2.4 | 19 | nS | ||
| Turn-off Delay Time | td(off) | VDD=-20V, ID=-5A, VGS=-10V,RGEN=2.4 | 16 | nS | ||
| Turn-off Fall Time | tf | VDD=-20V, ID=-5A, VGS=-10V,RGEN=2.4 | 24 | nS | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3, VGS=0V,IS=-5A | 1.2 | V | ||
| Diode Forward Current | -IS | Note2 | 5 | A | ||
2401121834_PJSEMI-PJM05P40SA_C20417178.pdf
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