N Channel Enhancement Mode MOSFET PJSEMI PJM138NSA Offering 2KV ESD Protection and Low On Resistance
Key Attributes
Model Number:
PJM138NSA
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
48pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
PJM138NSA
Package:
SOT-23
Product Description
Product Overview
The PJM138NSA is an N-Channel Enhancement Mode Power MOSFET designed for rugged and reliable performance. It features low gate charge and RDS(on), with ESD protection up to 2KV (HBM). This MOSFET is suitable for applications requiring direct logic-level interface with TTL/CMOS, such as solid-state relays and battery-operated systems.
Product Attributes
- Brand: PJM
- Product Type: N-Channel Enhancement Mode Power MOSFET
- ESD Protection: Up to 2KV (HBM)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 50 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=50V,VGS=0V | -- | -- | 0.5 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 100 | nA |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 10 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.6 | 1 | 1.4 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=0.22A | -- | 1 | 3.5 | |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=0.22A | -- | 1.1 | 6 | |
| Forward Transconductance | gFS | VDS=10V,ID=0.22A | -- | 0.13 | -- | S |
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 48 | -- | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V,f=1MHz | -- | 15 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f=1MHz | -- | 10.6 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 80 | -- | |
| Turn-on Delay Time | td(on) | VDD=30V, ID=0.29A, VGS=10V,RGEN=6 | -- | 5 | -- | nS |
| Turn-on Rise Time | tr | VDD=30V, ID=0.29A, VGS=10V,RGEN=6 | -- | 18 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=30V, ID=0.29A, VGS=10V,RGEN=6 | -- | 36 | -- | nS |
| Turn-off Fall Time | tf | VDD=30V, ID=0.29A, VGS=10V,RGEN=6 | -- | 14 | -- | nS |
| Diode Forward Voltage | VSD | VGS=0V,IS=0.22A | -- | -- | 1.4 | V |
| Diode Forward Current | IS | VGS=0V,IS=0.22A | -- | -- | 0.22 | A |
| Drain-Source Voltage | VDS | -- | -- | -- | 50 | V |
| Gate-Source Voltage | VGS | -- | -- | 20 | -- | V |
| Drain Current-Continuous | ID | -- | -- | -- | 0.22 | A |
| Maximum Power Dissipation | PD | -- | -- | -- | 0.35 | W |
| Junction Temperature | TJ | -- | -- | -- | 150 | |
| Storage Temperature Range | TSTG | -- | -55 | -- | +150 | |
| Thermal Resistance, Junction-to-Ambient | RJA | Note1 | -- | -- | 357 | /W |
2410122006_PJSEMI-PJM138NSA_C411713.pdf
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