Electronic Component PJSEMI PJM60H12MNSA N Channel MOSFET Featuring 600V Drain Source Voltage Rating
Key Attributes
Model Number:
PJM60H12MNSA
Product Custom Attributes
Drain To Source Voltage:
600V
Configuration:
-
Current - Continuous Drain(Id):
30mA
Operating Temperature -:
-
RDS(on):
800Ω@10V
Gate Threshold Voltage (Vgs(th)):
1V@8uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
1.08pF
Number:
1 N-channel
Output Capacitance(Coss):
4.53pF
Pd - Power Dissipation:
500mW
Input Capacitance(Ciss):
50pF
Gate Charge(Qg):
1.14nC
Mfr. Part #:
PJM60H12MNSA
Package:
SOT-23
Product Description
Product Overview
The PJM60H12MNSA is an N-Channel Depletion Mode MOSFET designed for various electronic applications. It offers improved ESD capability, RoHS and Reach compliance, and is halogen and antimony free. This MOSFET is characterized by its high breakdown voltage (600V) and low on-resistance.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 0.03 | A | |||
| Drain Current-Pulsed | IDM | 0.12 | A | |||
| Maximum Power Dissipation | PD | 0.5 | W | |||
| Gate Source ESD (HBM-C=100pF, R=1.5kΩ) | VESD(G-S) | 300 | V | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Electrical Characteristics (Ta=25℃ unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=-5V,ID=250μA | 600 | -- | -- | V |
| Gate-Body Leakage Current | ID(off) | VGS=-5V,ID=250μA | 0.1 | μA | ||
| Gate-Body Leakage Current | ID(off) | VDS=480V, VGS=-5V, TA=125℃ | 10 | μA | ||
| Gate Leakage Current | IGSS | VGS=±10V | ±200 | nA | ||
| Gate-to-Source Cut-off Voltage | VGS(off) | VDS=3V,ID=8μA | -2.7 | -1.8 | -1 | V |
| On-State Drain Current | IDSS | VGS=0V, VDS=25V | 12 | -- | mA | |
| Drain-Source On-Resistance | RDS(on) | VGS=0V, ID=3mA | 350 | 700 | Ω | |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=16mA | 400 | 800 | Ω | |
| Forward Transconductance | gFS | VDS=50V,ID=0.01A | 8 | 17 | -- | mS |
| Input Capacitance | Ciss | VDS=25V,VGS=-5V,f=1MHz | 50 | -- | pF | |
| Output Capacitance | Coss | 4.53 | -- | pF | ||
| Reverse Transfer Capacitance | Crss | 1.08 | -- | pF | ||
| Total Gate Charge | Qg | VDD=400V,ID=0.01A, VGS=-5V~5V | 1.14 | -- | nC | |
| Gate-Source Charge | Qgs | 0.5 | -- | nC | ||
| Gate-Drain Charge | Qgd | 0.37 | -- | nC | ||
| Turn-on Delay Time | td(on) | VDD=300V, ID=0.01A VGS=-5V~7V,RG=6Ω | 9.9 | -- | nS | |
| Turn-on Rise Time | tr | 55.8 | -- | nS | ||
| Turn-off Delay Time | td(off) | 56.4 | -- | nS | ||
| Turn-off Fall Time | tf | 136 | -- | nS | ||
| Diode Forward Voltage | VSD | VGS=-5V,IF=16mA | -- | 1.2 | V | |
| Diode Forward Current | IS | -- | 0.025 | A | ||
| Gate-Source Breakdown Voltage | VGSO | IGS=±1mA (Open Drain) | 0.75 | 1.2 | V | |
2509261740_PJSEMI-PJM60H12MNSA_C22396741.pdf
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