power management component PJSEMI PJM2300NSA-L N Channel Enhancement Mode Power MOSFET for switching
Key Attributes
Model Number:
PJM2300NSA-L
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5.5A
Operating Temperature -:
-
RDS(on):
28mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
300pF@10V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
PJM2300NSA-L
Package:
SOT-23
Product Description
Product Overview
The PJM2300NSA-L is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It offers excellent RDS(ON) and low gate charge, making it suitable for applications such as DC/DC converters and load switches for portable devices. This MOSFET is packaged in a SOT-23 package.
Product Attributes
- Brand: PingJingSemi
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID | 5.5 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 18 | A | ||
| Maximum Power Dissipation | PD | 1 | W | |||
| Junction Temperature | TJ | 150 | ℃ | |||
| Storage Temperature Range | TSTG | -55 | +150 | ℃ | ||
| Thermal Resistance,Junction-to-Ambient | RΘJA | Note2 | 125 | ℃/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 0.45 | -- | 1 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V, ID=4A | -- | 18 | 28 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=2.5V, ID=3A | -- | 22 | 35 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=3A | -- | 8 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | -- | 300 | -- | pF |
| Output Capacitance | Coss | -- | 120 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 80 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V, VGS=4.5V ID =3A, RGEN=6Ω | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | -- | 50 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 17 | -- | nS | |
| Turn-off Fall Time | tf | -- | 10 | -- | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V ID =4A | -- | 4.0 | -- | nC |
| Gate-Source Charge | Qgs | -- | 0.65 | -- | nC | |
| Gate-Drain Charge | Qg d | -- | 1.2 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=5.5A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 5.5 | A |
2508141651_PJSEMI-PJM2300NSA-L_C2856841.pdf
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