N Channel MOSFET PJSEMI PJM2312NSC Featuring Trench Technology and Low On Resistance for Load Switch
Key Attributes
Model Number:
PJM2312NSC
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-
RDS(on):
35mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
96pF
Number:
1 N-channel
Input Capacitance(Ciss):
500pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
PJM2312NSC
Package:
SOT-23-3
Product Description
Product Overview
The PJM2312NSC is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, and free from Halogen and Antimony. Designed for load switch and PWM applications, this MOSFET offers a VDS of 20V and a continuous ID of 5A, with low on-resistance (RDS(on) < 28m @VGS=4.5V).
Product Attributes
- Brand: Pingjing Semiconductor
- Origin: China (implied by domain)
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Drain Current-Continuous | ID | 5 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1.25 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Ambient | RJA | Note2 | 100 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=10V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note2, VDS=VGS,ID=250A | 0.5 | 0.7 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | Note2, VGS=4.5V,ID=4.5A | -- | 18 | 28 | m |
| Drain-Source On-Resistance | RDS(on) | Note2, VGS=2.5V,ID=4A | -- | 22 | 35 | m |
| Forward Transconductance | gFS | Note2, VDS=15V,ID=5A | -- | 25 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=8V,VGS=0V,f=1MHz | -- | 500 | -- | pF |
| Output Capacitance | Coss | -- | 295 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 96 | -- | pF | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=10V,ID=3A, VGS=4.5V | -- | 10 | -- | nC |
| Gate-Source Charge | Qgs | -- | 2.3 | -- | nC | |
| Gate-Drain Charge | Qg d | -- | 2.9 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V, ID=1A, VGS=4.5V, RGEN=6 | -- | 11 | -- | nS |
| Turn-on Rise Time | tr | -- | 30 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 35 | -- | nS | |
| Turn-off Fall Time | tf | -- | 10 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=5A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 5 | A |
2410221617_PJSEMI-PJM2312NSC_C41784034.pdf
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