N Channel Enhancement Mode MOSFET PJSEMI PJM3404NSC Designed for Load Switching and Power Management
Key Attributes
Model Number:
PJM3404NSC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
31mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
54pF
Number:
1 N-channel
Output Capacitance(Coss):
65.2pF
Input Capacitance(Ciss):
485.8pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
12.6nC@10V
Mfr. Part #:
PJM3404NSC
Package:
SOT-23-3
Product Description
Product Overview
The PJM3404NSC is an N-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications, offering excellent RDS(on) and low gate charge. It is suitable for power management solutions.
Product Attributes
- Brand: Pingjingsemi
- Package: SOT-23-3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 5.8 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1.4 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 89 | °C/W | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250μA | 1.2 | 1.6 | 2.4 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=5A | -- | 25 | 31 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V,ID=5A | -- | 32 | 40 | mΩ |
| Forward Transconductance | gFS | Note3, VDS=5V,ID=5A | -- | 15 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 485.8 | -- | pF |
| Output Capacitance | Coss | -- | 65.2 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 54 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=15V, RL=3Ω, VGS=10V,RGEN=3Ω | -- | 5 | -- | nS |
| Turn-on Rise Time | tr | -- | 3 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 15 | -- | nS | |
| Turn-off Fall Time | tf | -- | 3.5 | -- | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=15V,ID=5.8A, VGS=10V | -- | 12.6 | -- | nC |
| Gate-Source Charge | Qgs | -- | 1.9 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 2.6 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=5.8A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 5.8 | A |
2410122006_PJSEMI-PJM3404NSC_C41348048.pdf
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