Complementary N Channel and P Channel Power MOSFET Model PJSEMI PJM06C60PA Featuring Low On Resistance
Key Attributes
Model Number:
PJM06C60PA
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
9A
RDS(on):
70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
59pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.07nF
Output Capacitance(Coss):
69pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
23.4nC@10V
Mfr. Part #:
PJM06C60PA
Package:
SOP-8
Product Description
Product Overview
The PJM06C60PA is a complementary N-Channel and P-Channel Power MOSFET designed for high power and current handling capabilities. It features an advanced trench technology for low on-resistance and fast switching speeds, making it suitable for various electronic applications. This lead-free product is available in a surface mount SOP-8 package.
Product Attributes
- Brand: PingJingSemi
- Model: PJM06C60PA
- Material: Lead Free Product
- Package: SOP-8
Technical Specifications
| Parameter | Symbol | N-Channel Test Condition | N-Channel Min. | N-Channel Typ. | N-Channel Max. | N-Channel Unit | P-Channel Test Condition | P-Channel Min. | P-Channel Typ. | P-Channel Max. | P-Channel Unit |
| Drain-Source Voltage | VDS | 60 | V | -60 | V | ||||||
| Gate-Source Voltage | VGS | ±20 | V | ±20 | V | ||||||
| Drain Current-Continuous | ID | 6 | A | -6 | A | ||||||
| Drain Current-Pulsed | IDM | Note1 | 30 | A | Note1 | -25 | A | ||||
| Maximum Power Dissipation | PD | 2 | W | 2 | W | ||||||
| Single pulse avalanche energy | EAS | Note4 | 16 | mJ | Note4 | 30 | mJ | ||||
| Junction Temperature | TJ | 150 | °C | 150 | °C | ||||||
| Storage Temperature Range | TSTG | -55 | +150 | °C | -55 | +150 | °C | ||||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 62.5 | °C/W | Note2 | 62.5 | °C/W | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 60 | V | VGS=0V,ID=-250μA | 60 | V | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | μA | VDS=-60V,VGS=0V | 1 | μA | ||||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | VGS=±20V,VDS=0V | ±100 | nA | ||||
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 1 | 1.6 | 2.5 | V | Note3,VDS=VGS,ID=-250μA | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=8A | 39 | 50 | mΩ | Note3,VGS=-10V,ID=-6A | 52 | 70 | mΩ | ||
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=6A | 46 | 70 | mΩ | Note3,VGS=-4.5V,ID=-6A | 60 | 90 | mΩ | ||
| Forward Transconductance | gFS | Note3,VDS=5V,ID=1A | 4.2 | S | Note3,VDS=-5V,ID=-1A | 5.5 | S | ||||
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHz | 830 | pF | VDS=-30V,VGS=0V,f=1MHz | 1070 | pF | ||||
| Output Capacitance | Coss | 44.6 | pF | 69 | pF | ||||||
| Reverse Transfer Capacitance | Crss | 36 | pF | 59 | pF | ||||||
| Gate Resistance | Rg | VDS=0V,VGS=0V,f =1MHz | 0.65 | Ω | VDS=0V,VGS=0V,f =1MHz | 3.7 | Ω | ||||
| Turn-on Delay Time | td(on) | VDD=30V,RL=2.5Ω,VGS=10V,RGEN=3Ω | 5 | nS | VDD=-30V, RL=3.75Ω,VGS=-10V, RGEN=3Ω | 8 | nS | ||||
| Turn-on Rise Time | tr | 2.6 | nS | 4 | nS | ||||||
| Turn-off Delay Time | td(off) | 16.1 | nS | 32 | nS | ||||||
| Turn-off Fall Time | tf | 2.3 | nS | 7 | nS | ||||||
| Total Gate Charge | Qg | VDS=30V,ID=6A, VGS=10V | 14 | nC | VDS=-30V, ID=-8A, VGS=-10V | 23.4 | nC | ||||
| Gate-Source Charge | Qgs | 2.9 | nC | 4.1 | nC | ||||||
| Gate-Drain Charge | Qg d | 5.2 | nC | 4.8 | nC | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=6A | 1.2 | V | Note3,VGS=0V,IS=-6A | 1.2 | V | ||||
| Diode Forward Current | IS | 6 | A | -6 | A |
2405221106_PJSEMI-PJM06C60PA_C22438601.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
