N Channel Enhancement Mode Power MOSFET PJSEMI PJM65H02CNTE for Load Switch and PWM Applications
Key Attributes
Model Number:
PJM65H02CNTE
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
296pF
Gate Charge(Qg):
9.5nC
Mfr. Part #:
PJM65H02CNTE
Package:
TO-252
Product Description
Product Overview
The PJM65H02CNTE is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is designed for load switch and PWM applications, offering RoHS and Reach compliance, and is halogen and antimony free. This MOSFET is suitable for power management solutions.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Drain Current-Continuous | ID | TC = 25C | 2 | A | ||
| Drain Current-Pulsed | IDM | Note1 | 8 | A | ||
| Single Pulse Avalanche Energy | EAS | Note2 | 31 | mJ | ||
| Maximum Power Dissipation | PD | TC = 25C | 35 | W | ||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 3.6 | C/W | |||
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 650 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=30V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2.0 | -- | 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=1A | -- | 4.4 | 5.3 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 296 | -- | pF |
| Output Capacitance | Coss | -- | 34 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 7 | -- | pF | |
| Total Gate Charge | Qg | VDS=520V, ID=2A, VGS=10V | -- | 9.5 | -- | nC |
| Gate-Source Charge | Qgs | -- | 1.5 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 4.9 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=325V, ID=2A, RGEN=10 | -- | 11 | -- | nS |
| Turn-on Rise Time | tr | -- | 13 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 29 | -- | nS | |
| Turn-off Fall Time | tf | -- | 12 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=2A | -- | -- | 1.4 | V |
| Diode Forward Current | IS | -- | -- | 2 | A | |
2407301136_PJSEMI-PJM65H02CNTE_C36493744.pdf
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