Space saving dual digital transistor ROHM IMB3AT110 designed for inverter interface and driver applications
Key Attributes
Model Number:
IMB3AT110
Product Custom Attributes
Input Resistor:
4.7kΩ
Number:
2 PNP Pre-Biased Transistors
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
IMB3AT110
Package:
SC-74(SOT-457)
Product Description
Product Overview
The EMB3 / UMB3N / IMB3A series are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices offer significant advantages in terms of reduced mounting cost and area by integrating two DTA143T chips into a single package (EMT6, UMT6, or SMT6). The independent transistor elements ensure no interference between them, making them suitable for automated mounting machines.
Product Attributes
- Brand: ROHM
- Product Type: Dual Digital Transistor
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking | VCEO (V) | IC (mA) | R1 (k) | Power Dissipation (mW) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| EMB3 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | B3 | -50 | -100 | 4.7 | 150*1*2 |
| UMB3N | SOT-363 (UMT6) | 2021 | TN | 180 | 8 | 3000 | B3 | -50 | -100 | 4.7 | 150*1*2 |
| IMB3A | SOT-457 (SMT6) | 2928 | T110 | 180 | 8 | 3000 | B3 | -50 | -100 | 4.7 | 300*1*3 |
Absolute Maximum Ratings (Ta = 25C)
| Parameter | Symbol | Values (Unit) |
|---|---|---|
| Collector-base voltage | VCBO | -50 (V) |
| Collector-emitter voltage | VCEO | -50 (V) |
| Emitter-base voltage | VEBO | -5 (V) |
| Collector current | IC | -100 (mA) |
| Junction temperature | Tj | 150 () |
| Range of storage temperature | Tstg | -55 to +150 () |
Electrical Characteristics (Ta = 25C)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | IC = -50A | -50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = -1mA | -50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = -50A | -5 | - | - | V |
| Collector cut-off current | ICBO | VCB = -50V | - | - | -500 | nA |
| Emitter cut-off current | IEBO | VEB = -4V | - | - | -500 | nA |
| Collector-emitter saturation voltage | VCE(sat) | IC = -5mA, IB = -0.25mA | - | - | -300 | mV |
| DC current gain | hFE | VCE = -5V, IC = -1mA | 100 | 250 | 600 | - |
| Input resistance | R1 | - | 3.29 | 4.7 | 6.11 | k |
| Transition frequency | fT | VCE = -10V, IE = 5mA, f = 100MHz | - | 250 | - | MHz |
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
*4 Characteristics of built-in transistor.
2210111600_ROHM-IMB3AT110_C3646770.pdf
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