Dual N Channel Enhancement Mode Power MOSFET PJSEMI PJM04DN30PA designed for power management tasks
Key Attributes
Model Number:
PJM04DN30PA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
RDS(on):
65mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
33pF@15V
Number:
2 N-Channel
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
233pF@15V
Gate Charge(Qg):
3nC@10V
Mfr. Part #:
PJM04DN30PA
Package:
SOP-8
Product Description
Product Overview
The PJM04DN30PA is a Dual N-Channel Enhancement Mode Power MOSFET designed for various applications including load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, making it a reliable and environmentally conscious choice.
Product Attributes
- Brand: PingJingSemi
- Product Type: Dual N-Channel Enhancement Mode Power MOSFET
- Marking Code: 04DN30
- Package: SOP-8
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | -- | -- | V |
| Normalized Breakdown Voltage | TA=25 | -- | -- | -- | -- | |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.0 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=4A | -- | 29 | 38 | m |
| VGS=4.5V,ID=3A | -- | 45 | 65 | m | ||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 233 | -- | pF |
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | -- | 44 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | -- | 33 | -- | pF |
| Total Gate Charge | Qg | VDS=15V,VGS=10V,ID=2A | -- | 3 | -- | nC |
| Gate-Source Charge | Qgs | VDS=15V,VGS=10V,ID=2A | -- | 0.5 | -- | nC |
| Gate-Drain Charge | Qgd | VDS=15V,VGS=10V,ID=2A | -- | 0.8 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=15V,ID=4A, VGS=10V,RGEN=3 | -- | 4 | -- | nS |
| Turn-on Rise Time | tr | VDD=15V,ID=4A, VGS=10V,RGEN=3 | -- | 2.1 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=15V,ID=4A, VGS=10V,RGEN=3 | -- | 15 | -- | nS |
| Turn-off Fall Time | tf | VDD=15V,ID=4A, VGS=10V,RGEN=3 | -- | 3.2 | -- | nS |
| Diode Forward Voltage | VSD | VGS=0V,IS=4A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | VGS=0V, IS=4A | -- | -- | 4 | A |
| Maximum Power Dissipation | PD | TA=25 | -- | -- | 1.2 | W |
| Junction Temperature | TJ | -- | -- | -- | 150 | C |
| Storage Temperature Range | TSTG | -- | -55 | -- | +150 | C |
| Thermal Resistance,Junction-to-Ambient | RJA | Surface Mounted on FR4 Board, t 10 sec. | -- | 104 | -- | C/W |
2405221106_PJSEMI-PJM04DN30PA_C22438598.pdf
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