SiC FET Device With Normally Off Operation Qorvo UJ3C120080K3S Suitable for Switching Inductive Loads
Key Attributes
Model Number:
UJ3C120080K3S
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
33A
Type:
N-Channel
Pd - Power Dissipation:
254.2W
Mfr. Part #:
UJ3C120080K3S
Package:
TO-247-3
Product Description
SiC FET Device - UJ3C120080K3S
Product Overview
This 1200V-80mW SiC FET device features a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics allow for a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in the TO-247-3L package, this device offers ultra-low gate charge and exceptional reverse recovery, making it ideal for switching inductive loads and applications requiring standard gate drive. It exhibits an ultra-low on-resistance (RDS(on),typ) of 80mW and a maximum operating temperature of 175C.
Product Attributes
- Type: SiC FET
- Package: TO-247-3L
- Certifications: ESD protected: HBM class 2 and CDM class C3
- Datasheet Revision: F, November 2022
Technical Specifications
| Parameter | Test Conditions | Symbol | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-source voltage | VDS | 1200 | V | |||
| Gate-source voltage | VGS | -25 | +25 | V | ||
| Continuous drain current | TC = 100C, Limited by TJ,max | ID | 33 | A | ||
| Pulsed drain current | TC = 25C, Pulse width tp limited by TJ,max | IDM | 77 | A | ||
| Single pulsed avalanche energy | Starting TJ = 25C, L=15mH, IAS =2.8A | EAS | 58.5 | mJ | ||
| Power dissipation | TC = 25C | Ptot | 254.2 | W | ||
| Maximum junction temperature | TJ,max | 175 | C | |||
| Operating and storage temperature | TJ, TSTG | -55 | 175 | C | ||
| Max. lead temperature for soldering, 1/8 from case for 5 seconds | TL | 250 | C | |||
| Thermal Characteristics | ||||||
| Thermal resistance, junction-to-case | RqJC | 0.45 | 0.59 | C/W | ||
| Electrical Characteristics (TJ = +25C unless otherwise specified) | ||||||
| Drain-source breakdown voltage | VGS=0V, ID=1mA | BVDS | 1200 | V | ||
| Total drain leakage current | VDS=1200V, VGS=0V, TJ=25C | IDSS | 10 | 75 | A | |
| Total drain leakage current | VDS=1200V, VGS=0V, TJ=175C | IDSS | 50 | A | ||
| Drain-source on-resistance | VGS=12V, ID=20A, TJ=25C | RDS(on) | 80 | 100 | m | |
| Drain-source on-resistance | VGS=12V, ID=20A, TJ=175C | RDS(on) | 130 | 172 | m | |
| Total gate leakage current | VDS=0V, TJ=25C, VGS=-20V / +20V | IGSS | 6 | 20 | nA | |
| Gate threshold voltage | VDS=5V, ID=10mA | VG(th) | 4 | 6 | V | |
| Gate resistance | f=1MHz, open drain | RG | 4.5 | |||
| Typical Applications | ||||||
| Switch mode power supplies, Power factor correction modules, Motor drives, Induction heating, EV charging, PV inverters | ||||||
Typical Applications
- Switch mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
- EV charging
- PV inverters
2410121818_Qorvo-UJ3C120080K3S_C6731596.pdf
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