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quality TO2474L Package Silicon Carbide FET 750V 11m Qorvo UJ4SC075011K4S Ideal for Replacement of Si IGBTs factory
quality TO2474L Package Silicon Carbide FET 750V 11m Qorvo UJ4SC075011K4S Ideal for Replacement of Si IGBTs factory

TO2474L Package Silicon Carbide FET 750V 11m Qorvo UJ4SC075011K4S Ideal for Replacement of Si IGBTs

Key Attributes
Model Number: UJ4SC075011K4S
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
104A
Type:
N-Channel
Pd - Power Dissipation:
357W
Mfr. Part #:
UJ4SC075011K4S
Product Description

UJ4SC075011K4S: 750V, 11m G4 SiC FET

Product Overview

The UJ4SC075011K4S is a 750V, 11m G4 Silicon Carbide (SiC) FET. It utilizes a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in the TO-247-4L package, this FET features ultra-low gate charge and exceptional reverse recovery characteristics, ideal for switching inductive loads and applications requiring standard gate drive. Its key benefits include low intrinsic capacitance, low on-resistance, and excellent reverse recovery, contributing to reduced conduction and switching losses.

Product Attributes

  • Brand: UnitedSiC
  • Material: Silicon Carbide (SiC)
  • Package: TO-247-4L
  • Technology: G4 SiC FET (Cascode configuration)
  • ESD Protection: HBM class 2

Technical Specifications

Parameter Symbol Test Conditions Value Units
Drain-source breakdown voltage BVDS VGS=0V, ID=1mA 750 V
Drain-source on-resistance RDS(on) VGS=12V, ID=60A, TJ=25C 11 m (typ)
Drain-source on-resistance RDS(on) VGS=12V, ID=60A, TJ=125C 14.2 m (typ)
Drain-source on-resistance RDS(on) VGS=12V, ID=60A, TJ=175C 18.4 m (typ)
Gate threshold voltage VG(th) VDS=5V, ID=10mA 4.5 V (typ)
Total gate charge QG VDS=400V, ID=60A, VGS = -0V to 15V 75 nC (typ)
Reverse recovery charge Qrr VR=400V, IF=60A, VGS=0V, RG_EXT=5W, di/dt=2500A/ms, TJ=25C 288 nC (typ)
Low body diode Forward Voltage VFSD VGS=0V, IF=30A, TJ=25C 1.1 V (typ)
Maximum junction temperature TJ,max 175 C
Operating and storage temperature TJ, TSTG -55 to 175 C
Power dissipation Ptot TC = 25C 357 W (max)
Thermal resistance, junction-to-case RqJC 0.33 - 0.42 C/W
Continuous drain current ID TC = 25C 104 A (max)
Pulsed drain current IDM TC = 25C 300 A (max)
Single pulsed avalanche energy EAS L=15mH, IAS = 4.5A 151 mJ (typ)
SiC FET dv/dt ruggedness dv/dt 100 V/ns (max)
Input capacitance Ciss VDS=400V, VGS=0V, f=100kHz 3245 pF (typ)
Output capacitance Coss VDS=400V, VGS=0V, f=100kHz 178 pF (typ)
Reverse transfer capacitance Crss VDS=400V, VGS=0V, f=100kHz 1.2 pF (typ)

Typical Applications

  • Switch mode power supplies
  • EV charging
  • PV inverters
  • Power factor correction modules
  • Motor drives
  • Induction heating

2411272256_Qorvo-UJ4SC075011K4S_C7372449.pdf

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