PNP digital transistor ROHM DTA123EETL featuring built in bias resistors for inverter and driver circuit simplification

Key Attributes
Model Number: DTA123EETL
Product Custom Attributes
DC Current Gain:
20@20mA,5V
Current - Collector(Ic):
100mA
Output Voltage(VO(on)):
300mV@10mA,0.5mA
Input Resistor:
2.2kΩ
Resistor Ratio:
1
Number:
1 PNP Pre-Biased
Pd - Power Dissipation:
150mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTA123EETL
Package:
SC-75
Product Description

Product Overview

The DTA123E series is a PNP digital transistor featuring built-in biasing resistors (R1 = R2 = 2.2k), enabling the direct configuration of inverter circuits without external components. This simplifies circuit design by only requiring the setting of on/off conditions. These transistors are suitable for inverter, interface, and driver applications. Complementary NPN types are available in the DTC123E series.

Product Attributes

  • Brand: ROHM
  • Type: PNP Digital Transistor (Bias Resistor Built-in Transistor)

Technical Specifications

Model Package Type Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
DTA123EM SOT-723 (VMT3) 1212 T2L 180 8 8000 12
DTA123EE SOT-416 (EMT3) 1616 TL 180 8 3000 12
DTA123EUA SOT-323 (UMT3) 2021 T106 180 8 3000 12
DTA123EKA SOT-346 (SMT3) 2928 T146 180 8 3000 12
Parameter Symbol Conditions Min. Typ. Max. Unit
Supply voltage VCC -50 V
Input voltage (OFF threshold) VI(off) VCC = -5V, IO = -100A -0.5 V
Input voltage (ON threshold) VI(on) VO = -0.3V, IO = -20mA -3.0 V
Output voltage (ON) VO(on) IO = -10mA, II = -0.5mA -100 -300 mV
Input current II VI = -5V -3.8 mA
Output current (OFF) IO(off) VCC = -50V, VI = 0V -500 nA
DC current gain GI VO = -5V, IO = -20mA 20 -
Input resistance R1 1.54 2.86 k
Resistance ratio R2/R1 0.8 1.0 1.2 -
Transition frequency fT VCE = -10V, IE = 5mA, f = 100MHz 250 MHz
Collector current (MAX) IC(MAX)*1 -100 mA
Power dissipation (DTA123EM) PD*2 (Ta = 25C) 150 mW
Power dissipation (DTA123EE) PD*2 (Ta = 25C) 150 mW
Power dissipation (DTA123EUA) PD*2 (Ta = 25C) 200 mW
Power dissipation (DTA123EKA) PD*2 (Ta = 25C) 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150

2305111206_ROHM-DTA123EETL_C5157664.pdf

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