High speed switching diode R O 1N4448W with ultra fast recovery time and halogen free molding compound
Product Overview
The 1N4448W is a fast switching diode designed for high-speed switching applications. It offers a fast switching device with a typical Trr < 4nS, high stability, high reliability, and low reverse leakage. This diode is suitable for small signal switching and ultra-high speed switching applications.
Product Attributes
- Brand: Hongjiacheng Technology ()
- Origin: Zhuhai
- Case: SOD-123
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Cathode line denotes the cathode end
- Molding compound meets UL 94V-0 flammability rating
- RoHS-compliant
- Halogen-free
Technical Specifications
| Parameter | Symbol | Unit | Value | Conditions |
| Fast Switching Device | TRR | nS | <4 | Typical |
| Power Dissipation | Pd | mW | 400 | (Ta=25) |
| Maximum repetitive peak reverse voltage | VRRM | V | 100 | |
| DC Reverse Voltage | VR | V | 80 | |
| Maximum Average Forward Rectified Current | IF(AV) | mA | 150 | |
| Non-Repetitive Peak forward surge current | IFSM | A | 4 | @ tp=1.0s |
| Storage temperature | Tstg | -55 ~+150 | ||
| Junction temperature | Tj | -55 ~+150 | ||
| Typical thermal resistance | RJ-A | /W | 313 | |
| Maximum instantaneous forward voltage | VF | V | 0.72 | IF=5mA |
| Maximum instantaneous forward voltage | VF | V | 0.855 | IF=10mA |
| Maximum instantaneous forward voltage | VF | V | 1.0 | IF=100mA |
| Maximum instantaneous forward voltage | VF | V | 1.25 | IF=150mA |
| Reverse Leakage Current | IR1 | nA | 25 | VR=20V |
| Reverse Leakage Current | IR2 | nA | 100 | VR=80V |
| Junction Capacitance | CJ | pF | 4.0 | VR=0V, f=1MHz |
| Maxinum reverse recovery time | Trr | ns | 4.0 | IF=IR=10mA, Irr=0.1IR, RL=100 |
2512251530_R-O-1N4448W_C53238096.pdf
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