Low VCE saturation voltage transistor ROHM 2SD1782KT146R with 80 volt breakdown voltage in SOT346 package
Key Attributes
Model Number:
2SD1782KT146R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
120MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SD1782KT146R
Package:
TO-236-3(SOT-23-3)
Product Description
Product Overview
The 2SD1782K is a power transistor designed for driver applications. It features a low VCE(sat) of 0.2V (Typ.) and a high breakdown voltage of 80V (BVCEO). This transistor complements the 2SB1198K and is available in the SOT-346 (SMT3) package.
Product Attributes
- Brand: ROHM
- Package: SOT-346 (SMT3)
Technical Specifications
| Parameter | Symbol | Conditions | Values Unit | Min. | Typ. | Max. |
| Collector-base breakdown voltage | BVCBO | IC = 50A | V | 80 | - | - |
| Collector-emitter breakdown voltage | BVCEO | IC = 2mA | V | 80 | - | - |
| Emitter-base breakdown voltage | BVEBO | IE = 50A | V | 5 | - | - |
| Collector cut-off current | ICBO | VCB = 50V | nA | - | - | 500 |
| Emitter cut-off current | IEBO | VEB = 4V | nA | - | - | 500 |
| Collector-emitter saturation voltage | VCE(sat) | IC = 500mA, IB = 50mA | mV | - | 200 | 500 |
| DC current gain | hFE | VCE = 3V, IC = 100mA | - | 120 | - | 390 |
| Transition frequency | fT | VCE = 10V, IE = -50mA, f = 100MHz | MHz | - | 120 | - |
| Output capacitance | Cob | VCB = 10V, IE = 0A, f = 1MHz | pF | - | 7.5 | - |
Absolute Maximum Ratings
| Parameter | Symbol | Values Unit |
| Collector-base voltage | VCBO | 80 V |
| Collector-emitter voltage | VCEO | 80 V |
| Emitter-base voltage | VEBO | 5 V |
| Collector current | IC | 500 mA |
| Power dissipation | PD*1 | 200 mW |
| Junction temperature | Tj | 150 |
| Range of storage temperature | Tstg | -55 to +150 |
1810122117_ROHM-2SD1782KT146R_C86593.pdf
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