Low frequency amplification and high speed switching transistor ROHM 2SAR554P5T100 in SOT 89 package

Key Attributes
Model Number: 2SAR554P5T100
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
2W
Transition Frequency(fT):
340MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SAR554P5T100
Package:
SOT-89
Product Description

Product Overview

The 2SAR554P5 is a middle power transistor designed for low frequency amplification and high-speed switching applications. It features low saturation voltage, typically VCE(sat)=-400mV (Max.) at IC/IB=-500mA/-25mA, and high-speed switching capabilities. The transistor is available in a SOT-89 (MPT3) package.

Product Attributes

  • Brand: ROHM
  • Package: SOT-89 (MPT3)
  • Marking: MH

Technical Specifications

ParameterSymbolConditionsValuesUnit
Collector-base breakdown voltageBVCBOIC = -100A-80V
Collector-emitter breakdown voltageBVCEOIC = -1mA-80V
Emitter-base breakdown voltageBVEBOIE = -100A-6V
Collector currentIC-1.5A
Collector current (Pulse)ICP*1Pw=10ms, Single Pulse-3A
Power dissipationPD*2Each terminal mounted on a reference land.0.5W
Power dissipationPD*3Mounted on a ceramic board.(40400.7mm)2.0W
Junction temperatureTj150
Range of storage temperatureTstg-55 to +150
Collector cut-off currentICBOVCB = -80V-1.0A
Emitter cut-off currentIEBOVEB = -4V-1.0A
Collector-emitter saturation voltageVCE(sat)IC = -500mA, IB = -25mA-400mV
DC current gainhFEVCE = -3V, IC = -100mA120 - 390-
Transition frequencyfTVCE = -10V, IE = 200mA, f = 100MHz340MHz
Output capacitanceCobVCB = -10V, IE = 0A, f = 1MHz15pF
Turn-On timetonIC = -700mA, IB1 = -70mA, IB2 = 70mA, VCC -10V, RL = 1550ns
Storage timetstg300ns
Fall timetf50ns

2109180930_ROHM-2SAR554P5T100_C509294.pdf

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