Silicon Carbide Schottky Diode REASUNOS RSS06065B with 650 Volt Surge Peak Reverse Voltage and TO220-2 Package
Key Attributes
Model Number:
RSS06065B
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
650V
Reverse Leakage Current (Ir):
30uA@650V
Voltage - Forward(Vf@If):
1.4V@6A
Current - Rectified:
6A
Mfr. Part #:
RSS06065B
Package:
TO-220-2
Product Description
RSS06065B Silicon Carbide Schottky Diode
The RSS06065B is a Silicon Carbide Schottky Diode designed for applications requiring high-speed switching and low forward voltage drop. It features a positive temperature coefficient and temperature-independent switching behavior, making it suitable for Power Factor Correction, Sever Mode Power Supplies, and Uninterruptible Power Supply systems.
Product Attributes
- Brand: Reasunos
- Material: Silicon Carbide
- Package: TO-220-2
Technical Specifications
| Part Number | VRRM (V) | IF (A) | QC (nC) | Package | Marking | Packing | Qty. |
|---|---|---|---|---|---|---|---|
| RSS06065B | 650 | 6 (TC150) | 23 | TO-220-2 | RSS06065B | Tube | 50 PCS |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VRRM | Repetitive Peak Reverse Voltage | 650 | V | ||
| VRSM | Surge Peak Reverse Voltage | 650 | V | ||
| VR | DC Blocking Voltage | 650 | V | ||
| IF | Forward Current | 6 | A | TC150 | |
| IFSM | Non-Repetitive Forward Surge Current | 50 | A | TC = 25, tp = 10ms Half Sine Wave | |
| IF,Max | Non-Repetitive Peak Forward Surge Current | 520 | A | TC=25C, tP= 10 s, Pulse | |
| IFRM | Repetitive Peak Forward Surge Current | 35 | A | TC = 25, tp = 10ms Half Sine Wave | |
| Ptot | Power Dissipation | 70 | W | TC = 25 | |
| Ptot | Power Dissipation | W | TC = 110 | ||
| TJ,TSTG | Operating Junction and Storage Temperature | -55 to175 |
| Symbol | Parameter | Typ. | Max. | Unit | Test Conditions | Note |
|---|---|---|---|---|---|---|
| VF | Forward Voltage | 1.4 | 1.8 | V | IF =6A, TJ = 25 | |
| VF | Forward Voltage | 1.6 | V | IF =6A, TJ = 175 | ||
| IR | Reverse Current | 2 | 120 | A | VR =650V, TJ = 25 | |
| IR | Reverse Current | 15 | 30 | A | VR = 650V, TJ = 175 | |
| C | Total Capacitance | 423 | pF | VR=0V, TJ = 25, f=1MHz | ||
| C | Total Capacitance | 44 | pF | VR=200V, TJ = 25, f=1MHz | ||
| C | Total Capacitance | 37 | pF | VR=400V, TJ = 25, f = 1MHz | ||
| QC | Total Capacitive Charge | 23 | nC | VR =400V,TJ = 25 | Qc= 0 VR C V dV |
| Symbol | Parameter | Typ. | Unit | Note |
|---|---|---|---|---|
| RJC | Thermal Resistance from Junction to Case | 2.3 | /W |
2509121150_REASUNOS-RSS06065B_C51904695.pdf
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