High gain amplifier transistor ROHM 2SB852KT146B with built in resistor and Darlington configuration
Key Attributes
Model Number:
2SB852KT146B
Product Custom Attributes
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
200mW
DC Current Gain:
5000
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
32V
Operating Temperature:
-
Mfr. Part #:
2SB852KT146B
Package:
TO-236-3(SOT-23-3)
Product Description
Product Overview
The 2SB852K is a high-gain amplifier transistor featuring a Darlington connection for enhanced DC current gain. It includes a built-in 4k resistor between the base and emitter and complements the 2SD1383K. This transistor is suitable for high gain amplifier applications.
Product Attributes
- Brand: ROHM
- Package: SOT-346 (SMT3)
- Taping Code: T146
- Reel Size: 180 mm
- Tape Width: 8 mm
- Basic Ordering Unit: 3000 pcs
- Marking: U
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) | ||||||
| Collector-base voltage | VCBO | -40 | V | |||
| Collector-emitter voltage | VCES | -32 | V | |||
| Emitter-base voltage | VEBO | -6 | V | |||
| Collector current | IC | -0.3 | A | |||
| Collector current (Pulsed) | ICP*1 | Pw=10ms, duty=1/15 | -1.5 | A | ||
| Power dissipation | PD*2 | Each terminal mounted on a reference land | 200 | mW | ||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta = 25C) | ||||||
| Collector-base breakdown voltage | BVCBO | IC = -100A | -40 | - | - | V |
| Collector-emitter breakdown voltage | BVCES | IC = -1mA, RBE = 0 | -32 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = -100A | -6 | - | - | V |
| Collector cut-off current | ICBO | VCB = -24V | - | - | -1 | A |
| Emitter cut-off current | IEBO | VEB = -4.5V | - | - | -1 | A |
| Collector-emitter saturation voltage | VCE(sat)*3 | IC = -200mA, IB = -0.4mA | - | - | -1.5 | V |
| DC current gain | hFE*3 | VCE = -5V, IC = -100mA | 1k | - | - | |
| Transition frequency | fT*4 | VCE = -5V, IE = 10mA, f = 100MHz | - | 200 | - | MHz |
| Output capacitance | Cob | VCB = -10V, IE = 0mA, f = 1MHz | - | 3.0 | - | pF |
*1 Pw=10ms,duty=1/15
*2 Each terminal mounted on a reference land
*3 Pulsed
*4 Characteristics of built-in transistor
2404121754_ROHM-2SB852KT146B_C4365977.pdf
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