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quality Silicon N Channel Power MOSFET RENESAS RJK0651DPB-00 J5 60V 25A Pb free halogen free power switching factory
quality Silicon N Channel Power MOSFET RENESAS RJK0651DPB-00 J5 60V 25A Pb free halogen free power switching factory

Silicon N Channel Power MOSFET RENESAS RJK0651DPB-00 J5 60V 25A Pb free halogen free power switching

Key Attributes
Model Number: RJK0651DPB-00#J5
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-
RDS(on):
18mΩ@4.5V,12.5A
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
1 N-channel
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
2.03nF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
RJK0651DPB-00#J5
Package:
SC-100(SOT-669)
Product Description

RJK0651DPB 60V, 25A, 14m max. Silicon N Channel Power MOS FET

The RJK0651DPB is a high-speed switching Silicon N Channel Power MOS FET designed for power switching applications. It features a low on-resistance, capable of 4.5V gate drive, and low drive current, making it suitable for high-density mounting. This product is Pb-free and halogen-free, ideal for Switching Mode Power Supply applications.

Product Attributes

  • Brand: RENESAS
  • Certifications: Pb-free, Halogen-free

Technical Specifications

Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 60 - - V ID = 10 mA, VGS = 0 V
Gate to source leak current IGSS - - ±0.1 μA VGS = ±20 V, VDS = 0 V
Zero gate voltage drain current IDSS - - 1 μA VDS = 60 V, VGS = 0 V
Gate to source cutoff voltage VGS(off) 1.2 - 2.5 V VDS = 10 V, ID = 1 mA
Static drain to source on state resistance RDS(on) - 11 14 mΩ ID = 12.5 A, VGS = 10 V Note4
Static drain to source on state resistance RDS(on) - 13 18 mΩ ID = 12.5 A, VGS = 4.5 V Note4
Forward transfer admittance |yfs| - 40 - S ID = 12.5 A, VDS = 10 V Note4
Input capacitance Ciss - 2030 - pF VDS = 10 V, VGS = 0 V, f = 1 MHz
Output capacitance Coss - 250 - pF VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse transfer capacitance Crss - 100 - pF VDS = 10 V, VGS = 0 V, f = 1 MHz
Gate Resistance Rg - 0.7 - Ω VDS = 10 V, VGS = 0 V, f = 1 MHz
Total gate charge Qg - 15 - nC VDD = 25 V, VGS = 4.5 V, ID = 25 A
Gate to source charge Qgs - 6.7 - nC VDD = 25 V, VGS = 4.5 V, ID = 25 A
Gate to drain charge Qgd - 3.7 - nC VDD = 25 V, VGS = 4.5 V, ID = 25 A
Turn-on delay time td(on) - 8.4 - ns VGS = 10 V, ID = 12.5 A, VDD &agne; 30 V, RL = 2.4 Ω, Rg = 4.7 Ω
Rise time tr - 4.4 - ns VGS = 10 V, ID = 12.5 A, VDD &agne; 30 V, RL = 2.4 Ω, Rg = 4.7 Ω
Turn-off delay time td(off) - 42 - ns VGS = 10 V, ID = 12.5 A, VDD &agne; 30 V, RL = 2.4 Ω, Rg = 4.7 Ω
Fall time tf - 6.8 - ns VGS = 10 V, ID = 12.5 A, VDD &agne; 30 V, RL = 2.4 Ω, Rg = 4.7 Ω
Body–drain diode forward voltage VDF - 0.83 1.1 V IF = 25 A, VGS = 0 V Note4
Body–drain diode reverse recovery time trr - 32 - ns IF = 25 A, VGS = 0 V diF/ dt = 100 A/ μs

1808011540_RENESAS-RJK0651DPB-00-J5_C147993.pdf

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