Medium power transistor ROHM 2SC5876T106R designed for high speed switching and low saturation voltage performance
Key Attributes
Model Number:
2SC5876T106R
Product Custom Attributes
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-
Mfr. Part #:
2SC5876T106R
Package:
SOT-323
Product Description
Product Overview
The 2SC5876 is a medium power transistor designed for high-speed switching applications. It features high speed switching with a typical fall time of 80ns, low saturation voltage (typically 150mV at IC=100mA, IB=10mA), and strong discharge power for inductive and capacitance loads. This transistor complements the 2SA2088 and is suitable for low frequency amplifiers and high-speed switching applications.
Product Attributes
- Brand: ROHM
- Not Recommended for New Designs
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-base voltage | VCBO | 60 | V | |
| Collector-emitter voltage | VCEO | 60 | V | |
| Emitter-base voltage | VEBO | 6 | V | |
| Collector current | IC | 500 | mA | |
| Collector current (Pulsed) | ICP*1 | Pw=10ms | 1.0 | A |
| Power dissipation | PD*2 | Each terminal mounted on a reference land. | 200 | mW |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Collector-base breakdown voltage | BVCBO | IC = 100A | 60 | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 60 | V |
| Emitter-base breakdown voltage | BVEBO | IE = 100A | 6 | V |
| Collector cut-off current | ICBO | VCB = 40V | - | 1 |
| Emitter cut-off current | IEBO | VEB = 4V | - | 1 |
| Collector-emitter saturation voltage | VCE(sat) | IC = 100mA, IB = 10mA | - 150 300 | mV |
| DC current gain | hFE | VCE = 2V, IC = 50mA | 120 - 390 | - |
| Transition frequency | fT*3 | VCE = 10V, IE = -100mA, f = 100MHz | - 300 | MHz |
| Output capacitance | Cob | VCB = 10V, IE = 0mA, f = 1MHz | - 5 | pF |
| Turn-On time | ton*3 | IC = 500mA, IB1 = 50mA, IB2 = -50mA, VCC 25V, RL = 50 | - 70 | ns |
| Storage time | tstg*3 | - 130 | ns | |
| Fall time | tf*3 | - 80 | ns |
2007160107_ROHM-2SC5876T106R_C703599.pdf
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