Transistor ROHM 2SC5585TL low frequency type with 90 millivolt VCE saturation and 270 hFE typical gain

Key Attributes
Model Number: 2SC5585TL
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
320MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SC5585TL
Package:
SOT-416
Product Description

2SC5663 / 2SC5585 Low Frequency Transistor

The 2SC5663 and 2SC5585 are low-frequency transistors designed for amplifier and driver applications. They offer high current capability and low VCE(sat) for efficient operation.

Product Attributes

  • Brand: ROHM
  • Origin: Japan (implied by ROHM Co., Ltd.)

Technical Specifications

Part Number Package Outline VCEO IC VCE(sat) (Typ.) hFE (Typ.) fT (Typ.)
2SC5663 SOT-723 (VMT3) 1212 12V 500mA 90mV (at IC=200mA, IB=10mA) 270 (at VCE=2V, IC=10mA) 320MHz (at VCE=2V, IE=-10mA, f=100MHz)
2SC5585 SOT-416 (EMT3) 1616 12V 500mA 90mV (at IC=200mA, IB=10mA) 270 (at VCE=2V, IC=10mA) 320MHz (at VCE=2V, IE=-10mA, f=100MHz)
Parameter Symbol Conditions Value Unit
Absolute Maximum Ratings VCBO 15 V
VCEO 12 V
VEBO 6 V
IC 500 mA
ICP*1 1.0 A
PD*2 (2SC5663 / 2SC5585) 150 mW
Tj 150
Electrical Characteristics BVCBO IC = 10A 15 V
BVCEO IC = 1mA 12 V
BVEBO IE = 10A 6 V
ICBO VCB = 15V 100 nA
IEBO VEB = 6V 100 nA
VCE(sat) IC = 200mA, IB = 10mA 250 (Max) mV
Cob VCB = 10V, IE = 0A, f = 1MHz 7.5 pF

*1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land


1912111437_ROHM-2SC5585TL_C337983.pdf

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