Low collector emitter saturation voltage npn transistor ROHM 2SC5824T100R for driver applications
Key Attributes
Model Number:
2SC5824T100R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
2W
Transition Frequency(fT):
200MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SC5824T100R
Package:
SOT-89
Product Description
Product Overview
The 2SC5824 is a middle power NPN transistor designed for driver applications. It offers low VCE(sat) of 0.50V (Max.) at IC/IB=2A/200mA, making it suitable for efficient power management. This transistor is lead-free and RoHS compliant, ensuring environmental responsibility.
Product Attributes
- Brand: ROHM
- Complementary PNP Type: 2SA2071
- Certifications: Lead Free/RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 60 | - | - | V |
| Collector-base breakdown voltage | BVCBO | IC = 100A | 60 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = 100A | 6 | - | - | V |
| Collector cut-off current | ICBO | VCB = 40V | - | - | 1 | A |
| Emitter cut-off current | IEBO | VEB = 4V | - | - | - | A |
| DC current gain | hFE | VCE = 2V, IC = 100mA | 120 | - | 390 | - |
| Collector-emitter saturation voltage | VCE(sat) | IC = 2A, IB = 200mA | - | 200 | 500 | mV |
| Output capacitance | Cob | VCB = 10V, IE = 0A f = 1MHz | - | 20 | - | pF |
| Transition frequency | fT | VCE = 10V, IE = 100mA f=10MHZ | - | 200 | - | MHz |
| Storage time | tstg | IC=3A IB1=300mA IB2= 300mA VCC25V | - | 150 | - | ns |
| Turn-on time | ton | IC=3A IB1=300mA IB2= 300mA VCC25V | - | 50 | - | ns |
| Fall time | tf | IC=3A IB1=300mA IB2= 300mA VCC25V | - | 30 | - | ns |
| Parameter | Symbol | Value | Unit |
| Collector current | IC | 3.0 | A |
| Collector pulsed current | ICP *1 | 6.0 | A |
| Power dissipation (reference land) | PD *2 | 0.5 | W |
| Power dissipation (ceramic board) | PD *3 | 2.0 | W |
| Junction temperature | Tj | 150 | C |
| Range of storage temperature | Tstg | -55 to +150 | C |
1811151220_ROHM-2SC5824T100R_C126304.pdf
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