Integrated Bias Resistor PNP Digital Transistor ROHM DTA143TETL for Simplified Circuit and Interface

Key Attributes
Model Number: DTA143TETL
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
4.7kΩ
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTA143TETL
Package:
SOT-416
Product Description

Product Overview

The DTA143T series is a PNP digital transistor with a built-in biasing resistor, designed for simplified circuit configurations. These transistors eliminate the need for external input resistors, enabling inverter circuits with straightforward on/off condition settings. They are ideal for applications requiring inverter, interface, and driver functionalities. Complementary NPN types are also available (DTC143T series).

Product Attributes

  • Brand: ROHM
  • Type: PNP Digital Transistor (Bias Resistor Built-in Transistor)

Technical Specifications

Model Package Package Size (mm) Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking VCEO (V) IC (mA) R1 (k) Power Dissipation (mW)
DTA143TM SOT-723 1212 T2L 180 8 8000 93 -50V -100mA 4.7k 150*1
DTA143TEB SOT-416FL 1616 TL 180 8 3000 93 -50V -100mA 4.7k 150*1
DTA143TE SOT-416 1616 TL 180 8 3000 93 -50V -100mA 4.7k 150*1
DTA143TUB SOT-323FL 2021 TL 180 8 3000 93 -50V -100mA 4.7k 200*1
DTA143TUA SOT-323 2021 T106 180 8 3000 93 -50V -100mA 4.7k 200*1
DTA143TKA SOT-346 2928 T146 180 8 3000 93 -50V -100mA 4.7k 200*1

*1 Each terminal mounted on a reference land.

Electrical Characteristics (Ta = 25C)

Parameter Conditions Min. Typ. Max. Unit
Collector-base breakdown voltage IC = -50A - - -50 V
Collector-emitter breakdown voltage IC = -1mA - - -50 V
Emitter-base breakdown voltage IE = -50A - - -5 V
Collector cut-off current VCB = -50V - - -500 nA
Emitter cut-off current VEB = -4V - - -500 nA
Collector-emitter saturation voltage IC = -5mA, IB = -0.25mA - - -300 mV
DC current gain VCE = -5V, IC = -1mA 100 250 600 -
Input resistance (R1) - 3.29 4.7 6.11 k
Transition frequency (fT)*2 VCE = -10V, IE = 5mA, f = 100MHz - 250 - MHz

*2 Characteristics of built-in transistor

Absolute Maximum Ratings (Ta = 25C)

Parameter Symbol Values Unit
Collector-base voltage VCBO -50 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector current IC -100 mA
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150

2211091530_ROHM-DTA143TETL_C161958.pdf

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