60V 80A N Channel MOSFET Shenzhen ruichips Semicon RU6080L for Power Supply and Switching Applications
Key Attributes
Model Number:
RU6080L
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
1 N-channel
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
2.84nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
RU6080L
Package:
TO-252
Product Description
Product Overview
The RU6080L is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor. It features a 60V/80A rating with a low on-state resistance of 7m (Typ.) at VGS=10V. Designed with a super high dense cell structure, this MOSFET is 100% avalanche tested and available in lead-free and green devices (RoHS Compliant). It is ideal for applications requiring high-speed power switching, such as Switched-Mode Power Supplies (SMPS).
Product Attributes
- Brand: Ruichips Semiconductor
- Origin: China
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
| VDSS | Drain-Source Voltage | 60 | V | |||
| VGSS | Gate-Source Voltage | 25 | V | |||
| TJ | Maximum Junction Temperature | 175 | C | |||
| TSTG | Storage Temperature Range | -55 | 175 | C | ||
| ID | Continuous Drain Current(VGS=10V) | TC=25C | 80 | A | ||
| ID | Continuous Drain Current(VGS=10V) | TC=100C | 65 | A | ||
| IDP | 300s Pulse Drain Current | Tested TC=25C | 310 | A | ||
| PD | Maximum Power Dissipation | TC=25C | 125 | W | ||
| PD | Maximum Power Dissipation | TC=100C | 63 | W | ||
| RJC | Thermal Resistance-Junction to Case | 1.2 | C/W | |||
| EAS | Avalanche Energy, Single Pulsed | 225 | mJ | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250A | 60 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS= 60V, VGS=0V | 1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | TJ=85C | 10 | A | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | 2 | 3 | 4 | V |
| IGSS | Gate Leakage Current | VGS=25V, VDS=0V | 100 | nA | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS= 10V, IDS=30A | 7 | 8.5 | m | |
| VSD | Diode Forward Voltage | ISD=30A, VGS=0V | 0.8 | 1.2 | V | |
| trr | Reverse Recovery Time | ISD=30A, dlSD/dt=100A/s | 38 | ns | ||
| Qrr | Reverse Recovery Charge | ISD=30A, dlSD/dt=100A/s | 45 | nC | ||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 2.0 | |||
| Ciss | Input Capacitance | VGS=0V, VDS= 30V, Frequency=1.0MHz | 2840 | pF | ||
| Coss | Output Capacitance | VGS=0V, VDS= 30V, Frequency=1.0MHz | 300 | pF | ||
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS= 30V, Frequency=1.0MHz | 140 | pF | ||
| td(ON) | Turn-on Delay Time | VDD=30V, RL=30, IDS=30A, VGEN= 10V, RG=4.7 | 14 | ns | ||
| tr | Turn-on Rise Time | VDD=30V, RL=30, IDS=30A, VGEN= 10V, RG=4.7 | 45 | ns | ||
| td(OFF) | Turn-off Delay Time | VDD=30V, RL=30, IDS=30A, VGEN= 10V, RG=4.7 | 54 | ns | ||
| tf | Turn-off Fall Time | VDD=30V, RL=30, IDS=30A, VGEN= 10V, RG=4.7 | 32 | ns | ||
| Qg | Total Gate Charge | VDS=48V, VGS= 10V, IDS=30A | 55 | 72 | nC | |
| Qgs | Gate-Source Charge | VDS=48V, VGS= 10V, IDS=30A | 11 | nC | ||
| Qgd | Gate-Drain Charge | VDS=48V, VGS= 10V, IDS=30A | 13 | nC |
2409302202_Shenzhen-ruichips-Semicon-RU6080L_C3014354.pdf
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