N Channel Power MOSFET Shenzhen ruichips Semicon RU8205G with lead free and green certifications
Key Attributes
Model Number:
RU8205G
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
21mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
95pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
580pF@10V
Pd - Power Dissipation:
960mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
RU8205G
Package:
TSSOP-8
Product Description
RU8205G N-Channel Advanced Power MOSFET
The RU8205G is a N-Channel Advanced Power MOSFET designed for power management applications. It features a Super High Dense Cell Design for enhanced performance, offering reliable and rugged operation. This MOSFET is available in lead-free and green options.
Product Attributes
- Brand: Ruichips Semiconductor
- Model: RU8205G
- Type: N-Channel Advanced Power MOSFET
- Package: TSSOP-8
- Certifications: Lead Free and Green Available
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit | |||||||
| Common Ratings (TA=25C Unless Otherwise Noted) | |||||||||||||
| VDSS | Drain-Source Voltage | 20 | V | ||||||||||
| VGSS | Gate-Source Voltage | ±12 | |||||||||||
| TJ | Maximum Junction Temperature | 150 | °C | ||||||||||
| TSTG | Storage Temperature Range | -55 | 150 | °C | |||||||||
| IS | Diode Continuous Forward Current | TA=25°C | 1.7 | A | |||||||||
| IDP | Pulse Drain Current | 300μs Pulse, TA=25°C | 24 | VDSS | Drain-Source Voltage | 20 | V | ||||||
| VGSS | Gate-Source Voltage | ±12 | |||||||||||
| TJ | Maximum Junction Temperature | 150 | °C | ||||||||||
| TSTG | Storage Temperature Range | -55 | 150 | °C | |||||||||
| IS | Diode Continuous Forward Current | TA=25°C | 1.7 | A | |||||||||
| IDP | Pulse Drain Current | 300μs Pulse, TA=25°C | 24 | A | |||||||||
| ID | Continuous Drain Current | (VGS=4.5V) TA=25°C | 6 | A | |||||||||
| TA=70°C | 4.5 | A | |||||||||||
| PD | Maximum Power Dissipation | TA=25°C | 1.5 | W | |||||||||
| TA=70°C | 0.96 | W | |||||||||||
| RθJA | Thermal Resistance-Junction to Ambient | Mounted on Large Heat Sink | 83.5 | °C/W | |||||||||
| Electrical Characteristics (TA=25°C Unless Otherwise Noted) | |||||||||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250μA | 20 | V | |||||||||
| IDSS | Zero Gate Voltage Drain Current | VDS=20V, VGS=0V | 1 | μA | |||||||||
| TJ=85°C | 30 | μA | |||||||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250μA | 0.5 | 0.7 | 1.5 | V | |||||||
| IGSS | Gate Leakage Current | VGS=±10V, VDS=0V | ±100 | nA | |||||||||
| RDS(ON) | Drain-Source On-state Resistance | VGS=4.5V, IDS=6A | 21 | 24 | mΩ | ||||||||
| VGS=2.5V, IDS=5A | 30 | 40 | mΩ | ||||||||||
| VSD | Diode Forward Voltage | ISD=1A, VGS=0V | 1 | V | |||||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 1.8 | Ω | |||||||||
| Ciss | Input Capacitance | VGS=0V, VDS=10V, Frequency=1.0MHz | 580 | pF | |||||||||
| Coss | Output Capacitance | 120 | pF | ||||||||||
| Crss | Reverse Transfer Capacitance | 95 | pF | ||||||||||
| td(ON) | Turn-on Delay Time | VDD=10V, RL=1.7Ω, IDS=6A, VGEN=4.5V, RG=6Ω | 5 | ns | |||||||||
| tr | Turn-on Rise Time | 11 | ns | ||||||||||
| td(OFF) | Turn-off Delay Time | 38 | ns | ||||||||||
| tf | Turn-off Fall Time | 13 | ns | ||||||||||
| Qg | Total Gate Charge | VDS=16V, VGS=4.5V, IDS=6A | 10 | 14 | nC | ||||||||
| Qgs | Gate-Source Charge | 1.5 | |||||||||||
| Qgd | Gate-Drain Charge | 3.4 | |||||||||||
Applications
- Power Management
Ordering and Marking Information
| Device | Marking | Package | Packaging | Quantity | Reel Size | Tape width |
| RU8205G | RU8205G | TSSOP8 | Tape&Reel | 3000 | 13 | 12mm |
2409302231_Shenzhen-ruichips-Semicon-RU8205G_C694250.pdf
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