Dual N Channel Power MOSFET Shenzhen ruichips Semicon RU30D20M3 with Rugged Construction and Avalanche Tested
Key Attributes
Model Number:
RU30D20M3
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
2 N-Channel
Output Capacitance(Coss):
230pF
Pd - Power Dissipation:
16W
Input Capacitance(Ciss):
930pF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
RU30D20M3
Package:
DFN3030-8
Product Description
Product Overview
The RU30D20M3 is a Dual N-Channel Advanced Power MOSFET designed for switching applications. It features Ruichips' advanced TrenchTM technology, offering excellent QgxRDS(on) product (FOM), reliability, and ruggedness. This device is 100% avalanche tested and available in lead-free and green (RoHS compliant) versions. Ideal for on-board power in servers and synchronous rectification.
Product Attributes
- Brand: Ruichips
- Origin: Shenzhen City Ruichips Semiconductor Co., Ltd
- Certifications: RoHS Compliant
- Material: Advanced TrenchTM technology
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
| Absolute Maximum Ratings | VDSS | 30 | V | |
| VGSS | ±20 | V | ||
| TJ | 150 | °C | ||
| TSTG | -55 to 150 | °C | ||
| ID (TC=25°C) | 20 | A | ||
| IDP (TC=25°C, Pulse width 300µs) | 80 | A | ||
| IS (TC=25°C) | 20 | A | Mounted on Large Heat Sink | |
| PD (TC=25°C) | 20 | W | ||
| PD (TA=25°C) | 10.8 | W | Mounted on Large Heat Sink | |
| PD (TA=70°C) | 8.7 | W | Mounted on Large Heat Sink | |
| Static Characteristics | IDSS | 1 | µA | VDS=30V, VGS=0V |
| IDSS | ±100 | nA | VGS=±20V, VDS=0V | |
| BVDSS | 30 | V | VGS=0V, IDS=250µA | |
| VGS(th) | 1 to 2.5 | V | VDS=VGS, IDS=250µA | |
| RDS(ON) | 8.5 to 10 | mΩ | VGS=10V, IDS=10A | |
| RDS(ON) | 11.5 to 14 | mΩ | VGS=4.5V, IDS=8A | |
| VSD | 1.3 | V | ISD=20A, VGS=0V | |
| Dynamic Characteristics | trr | 24 | ns | ISD=20A, dlSD/dt=100A/µs |
| Qrr | 13 | nC | ISD=20A, VGS=0V | |
| Ciss | 930 | pF | VDS=24V, VGS=10V, IDS=20A, Frequency=1.0MHz | |
| Coss | 230 | pF | ||
| Crss | 90 | pF | ||
| Gate Charge Characteristics | Qg | 18 | nC | VDD=15V, RL=0.75Ω, IDS=20A, VGEN=10V, RG=3Ω |
| Qgs | 5 | nC | ||
| Qgd | 7 | nC | ||
| RG | 1 | Ω | VGS=0V, VDS=15V, Frequency=1.0MHz | |
| Thermal Resistance | RθJC | 8 | °C/W | |
| RθJA | 35 | °C/W | Mounted on 1 inch square copper board, t≤10sec | |
| Avalanche Ratings | EAS | 42 | mJ | IAS =13A, VDD = 24V, RG = 50Ω, Starting TJ = 25°C |
2410122017_Shenzhen-ruichips-Semicon-RU30D20M3_C2894331.pdf
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