Gallium Nitride GaN Semiconductor Device RENESAS TP65H050G4WS 650V Normally Off Gen IV SuperGaN FET
Product Overview
The TP65H050G4WS is a 650V, 50 m gallium nitride (GaN) FET utilizing Renesas's Gen IV platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, offering enhanced reliability and performance. Leveraging advanced epi and patented design technologies, the Gen IV SuperGaN platform improves efficiency over silicon by reducing gate charge, output capacitance, crossover loss, and reverse recovery charge. It enables high-density, cost-effective AC-DC bridgeless totem-pole PFC designs and achieves higher efficiency in both hard- and soft-switched circuits. The device is easy to drive with standard gate drivers and features a GSD pin layout for high-speed design optimization.
Product Attributes
- Brand: Renesas
- Technology: SuperGaN Gen IV Platform
- Material: Gallium Nitride (GaN)
- Certifications: JEDEC qualified
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Drain to source voltage | VDSS | 650 | V | TJ = -55C to 150C |
| Transient drain to source voltage | VDSS(TR) | 800 | V | a |
| Gate to source voltage | VGSS | 20 | V | |
| Maximum power dissipation | PD | 119 | W | @TC=25C |
| Continuous drain current | ID | 34 | A | @TC=25C, b |
| Continuous drain current | ID | 22 | A | @TC=100C, b |
| Pulsed drain current | IDM | 150 | A | pulse width: 10s |
| Operating temperature (Case) | TC | -55 to +150 | C | |
| Junction temperature | TJ | -55 to +150 | C | |
| Storage temperature | TS | -55 to +150 | C | |
| Soldering peak temperature | TSOLD | 260 | C | c |
| Mounting Torque | 80 | N cm | ||
| Junction-to-case thermal resistance | RJC | 1.05 | C/W | Typical |
| Junction-to-ambient thermal resistance | RJA | 40 | C/W | Typical |
| Drain-source on-resistance | RDS(on)eff | 50 | m | max*, VGS=10V, ID=22A |
| Drain-source on-resistance | RDS(on)eff | 105 | m | VGS=10V, ID=22A, TJ=150C |
| Total gate charge | QG | 16 | nC | typ, VDS=400V, VGS=0V to 10V, ID=22A |
| Output charge | QOSS | 120 | nC | typ, VGS=0V, VDS=0V to 400V |
| Reverse recovery charge | QRR | 120 | nC | typ |
Notes:
a. In off-state, spike duty cycle D<0.01, spike duration <30s, non repetitive
b. For increased stability at high current operation, see Circuit Implementation on page 3
c. For 10 sec., 1.6mm from the case
* Dynamic on-resistance; see Figures 18 and 19
2510261727_RENESAS-TP65H050G4WS_C48782924.pdf
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