Shenzhen ruichips Semicon RU75N08R N Channel Power MOSFET with 75V Drain Source Voltage and Avalanche Rating
Key Attributes
Model Number:
RU75N08R
Product Custom Attributes
Drain To Source Voltage:
75V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
11mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
170pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.4nF
Output Capacitance(Coss):
450pF
Pd - Power Dissipation:
280W
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
RU75N08R
Package:
TO-220
Product Description
Product Overview
The RU75N08 is an N-Channel Advanced Power MOSFET designed for switching applications. It features ultra-low on-resistance, exceptional dv/dt capability, fast switching, and is fully avalanche rated. With a 175C operating temperature and lead-free/green availability, it is suitable for various switching application systems.
Product Attributes
- Brand: Ruichips Semiconductor
- Origin: CHINA
- Certifications: Green & Lead Free Available
Technical Specifications
| Model | Parameter | Rating | Unit | Test Condition | Min. | Typ. | Max. | |
| RU75N08 | Drain-Source Voltage (VDSS) | 75 | V | |||||
| Gate-Source Voltage (VGSS) | 25 | V | ||||||
| Maximum Junction Temperature (TJ) | 175 | C | ||||||
| Storage Temperature Range (TSTG) | -55 to 175 | C | ||||||
| Diode Continuous Forward Current (IS) | 80 | A | TC=25C | |||||
| Pulse Drain Current (IDP) | 360 | A | 300s Pulse, TC=25C | |||||
| Continuous Drain Current (ID) | 80 | A | TC=25C | |||||
| Continuous Drain Current (ID) | 76 | A | TC=100C | |||||
| Maximum Power Dissipation (PD) | 280 | W | TC=25C | |||||
| Maximum Power Dissipation (PD) | 140 | W | TC=100C | |||||
| Thermal Resistance-Junction to Case (RJC) | 0.55 | C/W | ||||||
| Avalanche Energy, Single Pulsed (EAS) | 1.2 | J | ||||||
| Drain-Source Breakdown Voltage (BVDSS) | 75 | V | VGS=0V, IDS=250A | 75 | ||||
| RU75N08 | Zero Gate Voltage Drain Current (IDSS) | 1 | A | VDS= 75V, VGS=0V | ||||
| Zero Gate Voltage Drain Current (IDSS) | 30 | A | TJ=85C | |||||
| Gate Threshold Voltage (VGS(th)) | 2 | V | VDS=VGS, IDS=250A | 2 | 3 | 4 | ||
| Gate Leakage Current (IGSS) | 100 | nA | VGS=25V, VDS=0V | |||||
| Drain-Source On-state Resistance (RDS(ON)) | 8 | m | VGS= 10V, IDS=40A | 8 | 11 | |||
| Diode Forward Voltage (VSD) | 0.83 | V | ISD=20 A, VGS=0V | 0.83 | 1.2 | |||
| Reverse Recovery Time (trr) | 50 | ns | ISD=40A, dlSD/dt=100A/s | 50 | ||||
| Reverse Recovery Charge (qrr) | 110 | nC | ISD=40A, dlSD/dt=100A/s | 110 | ||||
| Gate Resistance (RG) | 1.4 | VGS=0V,VDS=0V,F=1MHz | 1.4 | |||||
| Input Capacitance (Ciss) | 3400 | pF | VGS=0V, VDS= 30V, Frequency=1.0MHz | 3400 | ||||
| Output Capacitance (Coss) | 450 | pF | VGS=0V, VDS= 30V, Frequency=1.0MHz | 450 | ||||
| RU75N08 | Reverse Transfer Capacitance (Crss) | 170 | pF | VGS=0V, VDS= 30V, Frequency=1.0MHz | 170 | |||
| Turn-on Delay Time (td(ON)) | 22 | ns | VDD=35V, RL=35, IDS= 1A, VGEN= 10V, RG=7 | 22 | 40 | |||
| Turn-on Rise Time (tr) | 11 | ns | VDD=35V, RL=35, IDS= 1A, VGEN= 10V, RG=7 | 11 | 20 | |||
| RU75N08 | Turn-off Delay Time (td(OFF)) | 70 | ns | VDD=35V, RL=35, IDS= 1A, VGEN= 10V, RG=7 | 70 | 130 | ||
| Turn-off Fall Time (tf) | 62 | ns | VDD=35V, RL=35, IDS= 1A, VGEN= 10V, RG=7 | 62 | 120 | |||
| Total Gate Charge (Qg) | 75 | nC | VDS=60V, VGS= 10V, IDS=80A | 75 | 110 | |||
| Gate-Source Charge (Qgs) | 18 | nC | VDS=60V, VGS= 10V, IDS=80A | |||||
| RU75N08 | Gate-Drain Charge (Qgd) | 25 | nC | VDS=60V, VGS= 10V, IDS=80A | 25 |
2410122025_Shenzhen-ruichips-Semicon-RU75N08R_C171699.pdf
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