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quality Renesas 2sk2225 80 e t2 mos fet featuring 1500v vdss and fast switching speed for power applications factory
quality Renesas 2sk2225 80 e t2 mos fet featuring 1500v vdss and fast switching speed for power applications factory

Renesas 2sk2225 80 e t2 mos fet featuring 1500v vdss and fast switching speed for power applications

Key Attributes
Model Number: 2SK2225-80-E#T2
Product Custom Attributes
Pd - Power Dissipation:
50W
Reverse Transfer Capacitance (Crss@Vds):
60pF
Input Capacitance(Ciss):
990pF
Output Capacitance(Coss):
125pF
Mfr. Part #:
2SK2225-80-E#T2
Package:
TO-3P
Product Description

Product Overview

The 2SK2225-80-E is a high-speed power switching MOS FET featuring a high breakdown voltage of 1500V and a drain current of 2A. It offers low drive current and is suitable for applications requiring fast switching characteristics. This component is classified under the "Standard" quality grade, making it appropriate for a wide range of electronic equipment.

Product Attributes

  • Brand: RENESAS
  • Quality Grade: Standard
  • Package Codes: PRSS0003ZP-A, PRSS0003ZD-A
  • Package Names: TO-3PFP, TO-3PF
  • Assembly Location: CHINA, KOREA

Technical Specifications

Item Symbol Value Unit Test Conditions
Drain to source voltage VDSS 1500 V
Gate to source voltage VGSS ±20 V
Drain current ID 2 A
Drain peak current ID(pulse) 7 A Notes1
Body to drain diode reverse drain current IDR 2 A
Channel dissipation Pch 50 W Notes2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Drain to source breakdown voltage V(BR)DSS 1500 V ID = 10 mA, VGS = 0
Gate to source leak current IGSS ±1 µA VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS 500 µA VDS =1200 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 to 4.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state resistance RDS(on) 9 to 12 Ω ID = 1 A, VGS = 15 V Notes3
Forward transfer admittance |yfs| 0.45 to 0.75 S ID = 1 A, VDS = 20 V Notes3
Input capacitance Ciss 990 pF VDS = 10 V, VGS = 0, f = 1 MHz
Output capacitance Coss 125 pF VDS = 10 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance Crss 60 pF VDS = 10 V, VGS = 0, f = 1 MHz
Turn-on delay time td(on) 17 ns ID = 1 A, VGS = 10 V, RL = 30 Ω
Rise time tr 50 ns ID = 1 A, VGS = 10 V, RL = 30 Ω
Turn-off delay time td(off) 150 ns ID = 1 A, VGS = 10 V, RL = 30 Ω
Fall time tf 50 ns ID = 1 A, VGS = 10 V, RL = 30 Ω
Body-drain diode forward voltage VDF 0.9 V IF = 2 A, VGS = 0
Body-drain diode reverse recovery time trr 1750 ns IF = 2 A, VGS = 0, diF / dt = 100 A / µs

2404031256_RENESAS-2SK2225-80-E-T2_C3291307.pdf

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