Dual transistor ROHM EMT1T2R suitable for small signal amplification and automatic mounting processes
Key Attributes
Model Number:
EMT1T2R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
140MHz
Type:
PNP
Number:
2 PNP
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
EMT1T2R
Package:
SOT-563(SOT-666)
Product Description
Product Overview
The EMT1 / UMT1N / IMT1A are general-purpose dual transistors designed for small signal amplification. They feature two independent 2SA1037AK chips housed in EMT, UMT, or SMT packages, offering reduced mounting costs and board space. These transistors are compatible with automatic mounting machines and ensure interference-free operation.
Product Attributes
- Brand: ROHM
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Number | Package | Outline Parameter | VCEO (V) | IC (mA) | VCBO (V) | VCEO (V) | VEBO (V) | IC (mA) | PD (mW/Total) | Tj (C) | Tstg (C) | BVCBO (V) | BVCEO (V) | BVEBO (V) | ICBO (nA) | IEBO (nA) | VCE(sat) (mV) | hFE | fT (MHz) | Cob (pF) |
| EMT1 / UMT1N | EMT6 / UMT6 / SC-107C / SOT-363 / SMT6 | Tr1 and Tr2 | -50 | -150 | -60 | -50 | -6 | -150 | 150 (*1, *2) | 150 | -55 to +150 | -60 | -50 | -6 | -100 | -100 | -500 | 120 - 560 | 140 | - 5 |
| IMT1A | SMT6 / SOT-457 | Tr1 and Tr2 | -50 | -150 | -60 | -50 | -6 | -150 | 300 (*1, *3) | 150 | -55 to +150 | -60 | -50 | -6 | -100 | -100 | -500 | 120 - 560 | 140 | - 5 |
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
2008151232_ROHM-EMT1T2R_C507458.pdf
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