Low saturation voltage power transistor ROHM 2SD1782KT146Q designed for in driver and switching applications

Key Attributes
Model Number: 2SD1782KT146Q
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
120MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SD1782KT146Q
Package:
TO-236-3(SOT-23-3)
Product Description

Product Overview

The 2SD1782K is a power transistor designed for driver applications. It features a low VCE(sat) of 0.2V (Typ.) and a high breakdown voltage of BVCEO=80V. This transistor complements the 2SB1198K and is available in a SOT-346 (SMT3) package.

Product Attributes

  • Brand: ROHM
  • Package: SOT-346 (SMT3)
  • Marking: AJ

Technical Specifications

ParameterSymbolConditionsValuesUnit
Collector-base breakdown voltageBVCBOIC = 50A80V
Collector-emitter breakdown voltageBVCEOIC = 2mA80-
Emitter-base breakdown voltageBVEBOIE = 50A5-
Collector cut-off currentICBOVCB = 50V-500 nA
Emitter cut-off currentIEBOVEB = 4V-500 nA
Collector-emitter saturation voltageVCE(sat)IC = 500mA, IB = 50mA- 200 500mV
DC current gainhFEVCE = 3V, IC = 100mA120 - 390-
Transition frequencyfTVCE = 10V, IE = -50mA, f = 100MHz- 120MHz
Output capacitanceCobVCB = 10V, IE = 0A, f = 1MHz- 7.5pF

Absolute Maximum Ratings

ParameterSymbolValuesUnit
Collector-base voltageVCBO80V
Collector-emitter voltageVCEO80V
Emitter-base voltageVEBO5V
Collector currentIC500mA
Power dissipationPD*1200mW
Junction temperatureTj150
Range of storage temperatureTstg-55 to +150

Packaging Specifications

Part No.PackagePackage sizeTaping codeReel size (mm)Tape width (mm)Basic ordering unit.(pcs)
2SD1782KSOT-346 (SMT3)2928T14618083000

2012102316_ROHM-2SD1782KT146Q_C962641.pdf

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