Integrated dual digital transistor ROHM EMD9T2R for inverter and driver applications in compact size
Key Attributes
Model Number:
EMD9T2R
Product Custom Attributes
Input Resistor:
10kΩ
Resistor Ratio:
4.7
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
EMD9T2R
Package:
SOT-563
Product Description
Product Overview
The EMD9 / UMD9N / IMD9A are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices integrate NPN and PNP transistor elements within a single package, offering advantages such as reduced mounting cost and area, and independent transistor elements to eliminate interference. They are compatible with automatic mounting machines, facilitating efficient production.
Product Attributes
- Brand: ROHM
- RoHS: Yes
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMD9 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | D9 |
| UMD9N | SOT-363 (UMT6) | 2021 | TR | 180 | 8 | 3000 | D9 |
| IMD9A | SOT-457 (SMT6) | 2928 | T108 | 180 | 8 | 3000 | D9 |
Technical Specifications (Absolute Maximum Ratings)
| Parameter | Symbol | DTr1 (NPN) | DTr2 (PNP) | Unit |
|---|---|---|---|---|
| Supply voltage | VCC | 50 | -50 | V |
| Input voltage | VIN | -6 to 40 | -40 to 6 | V |
| Output current | IO | 70 | -70 | mA |
| Collector current (MAX) | IC(MAX)*1 | 100 | -100 | mA |
| Power dissipation | PD*2*3 | 150 | - | mW/Total |
| Power dissipation | PD*2*4 | - | 300 | mW/Total |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
Technical Specifications (Electrical Characteristics - For DTr1(NPN))
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input voltage (OFF) | VI(off) | VCC = 5V, IO = 100A | - | - | 0.3 | V |
| Input voltage (ON) | VI(on) | VO = 0.3V, IO = 1mA | 1.4 | - | - | V |
| Output voltage (ON) | VO(on) | IO = 5mA, II = 0.25mA | - | 100 | 300 | mV |
| Input current | II | VI = 5V | - | - | 880 | A |
| Output current (OFF) | IO(off) | VCC = 50V, VI = 0V | - | - | 500 | nA |
| DC current gain | GI | VO = 5V, IO = 5mA | 68 | - | - | - |
| Input resistance | R1 | - | - | 7 | 13 | k |
| Resistance ratio | R2/R1 | - | - | 4.7 | - | - |
| Transition frequency | fT*1 | VCE = 10V, IE = -5mA, f = 100MHz | - | 250 | - | MHz |
Technical Specifications (Electrical Characteristics - For DTr2(PNP))
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input voltage (OFF) | VI(off) | VCC = -5V, IO = -100A | - | - | -0.3 | V |
| Input voltage (ON) | VI(on) | VO = -0.3V, IO = -1mA | -1.4 | - | - | V |
| Output voltage (ON) | VO(on) | IO = -5mA, II = -0.25mA | - | - | -300 | mV |
| Input current | II | VI = -5V | - | - | -880 | A |
| Output current (OFF) | IO(off) | VCC = -50V, VI = 0V | - | - | -500 | nA |
| DC current gain | GI | VO = -5V, IO = -5mA | 68 | - | - | - |
| Input resistance | R1 | - | - | 7 | 13 | k |
| Resistance ratio | R2/R1 | - | - | 4.7 | - | - |
| Transition frequency | fT*1 | VCE = -10V, IE = 5mA, f = 100MHz | - | 250 | - | MHz |
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
2411280042_ROHM-EMD9T2R_C308700.pdf
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