Built in bias resistor digital transistor ROHM DTA113ZKAT146 PNP type for inverter and interface driver circuit designs

Key Attributes
Model Number: DTA113ZKAT146
Product Custom Attributes
Operating Temperature:
-55℃~+150℃
DC Current Gain:
33@5mA,5V
Current - Collector(Ic):
100mA
Type:
PNP
Output Voltage(VO(on)):
100mV@10mA,0.5mA
Transition Frequency(fT):
250MHz
Input Resistor:
1kΩ
Vce Saturation(VCE(sat)):
300mV@500uA,10mA
Resistor Ratio:
10
Number:
-
Pd - Power Dissipation:
200mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTA113ZKAT146
Package:
TO-236-3(SOT-23-3)
Product Description

Product Overview

The DTA113Z series are PNP digital transistors with built-in bias resistors, designed for simplified circuit configurations. These transistors feature integrated resistors (R1 = 1.0k, R2 = 2.2k) that eliminate the need for external input resistors, enabling inverter circuit designs with only on/off condition settings. This simplifies circuit design and is ideal for applications such as inverters, interfaces, and drivers. Complementary NPN types are available in the DTC113Z series.

Product Attributes

  • Brand: ROHM
  • Product Type: Digital Transistor (Bias Resistor Built-in Transistor)
  • Polarity: PNP

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
DTA113ZE SOT-416 (EMT3) 1616 TL 180 8 3000 E11
DTA113ZUA SOT-323 (UMT3) 2021 T106 180 8 3000 111
DTA113ZKA SOT-346 (SMT3) 2928 T146 180 8 3000 E11
Parameter Symbol Conditions Value Unit
Supply voltage VCC -50 V
Maximum collector current IC(MAX.) -100 mA
Built-in resistor R1 R1 1.0k
Built-in resistor R2 R2 10k
Input voltage (off) VI(off) VCC = -5V, IO = -100A - V
Input voltage (on) VI(on) VO = -0.3V, IO = -20mA -3.0 -
Output voltage (on) VO(on) IO = -10mA, II = -0.5mA -100 to -300 mV
Input current II VI = -5V - mA
Output current (off) IO(off) VCC = -50V, VI = 0V - nA
DC current gain GI VO = -5V, IO = -5mA 33 -
Input resistance R1 0.7 to 1.3 k
Resistance ratio R2/R1 8 to 12 -
Transition frequency fT VCE = -10V, IE = 5mA, f = 100MHz 250 MHz
Power dissipation (DTA113ZE) PD*2 Ta = 25C 150 mW
Power dissipation (DTA113ZUA) PD*2 Ta = 25C 200 mW
Power dissipation (DTA113ZKA) PD*2 Ta = 25C 200 mW
Junction temperature Tj 150
Storage temperature range Tstg -55 to +150

2110272130_ROHM-DTA113ZKAT146_C2909777.pdf

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