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quality dual digital transistor ROHM UMB11NTN ideal for inverter and driver applications in compact SOT363 package factory
quality dual digital transistor ROHM UMB11NTN ideal for inverter and driver applications in compact SOT363 package factory

dual digital transistor ROHM UMB11NTN ideal for inverter and driver applications in compact SOT363 package

Key Attributes
Model Number: UMB11NTN
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
13kΩ
Resistor Ratio:
1.2
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMB11NTN
Package:
SOT-363(UMT6)
Product Description

Product Overview

The EMB11 / UMB11N / IMB11A series are general-purpose dual digital transistors, designed for inverter, interface, and driver applications. These devices integrate two independent DTA114E chips within compact SOT-563 (EMT6), SOT-363 (UMT6), or SOT-457 (SMT6) packages. Their design allows for mounting with automatic machines and offers the advantage of halving mounting costs and area by eliminating interference between transistor elements. They are suitable for applications requiring efficient and space-saving component integration.

Product Attributes

  • Brand: ROHM
  • Certifications: RoHS

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
EMB11 SOT-563 (EMT6) 1616 T2R 180 8 8000 B11
UMB11N SOT-363 (UMT6) 2021 TN 180 8 3000 B11
IMB11A SOT-457 (SMT6) 2928 T110 180 8 3000 B11
Parameter Symbol Conditions Values (Min.) Values (Typ.) Values (Max.) Unit
Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common>
Supply voltage VCC -50 V
Input voltage VIN -40 10 V
Output current IO -50 mA
Collector current IC(MAX)*1 -100 mA
Power dissipation PD*2*3 150 mW
Power dissipation PD*2*3 UMB11N 150 mW
Power dissipation PD*2*4 IMB11A 300 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common>
Input voltage (OFF) VI(off) VCC = -5V, IO = -100A -0.5 V
Input voltage (ON) VI(on) VO = -0.3V, IO = -10mA -3.0 V
Output voltage (ON) VO(on) IO = -10mA, II = -0.5mA -100 -300 mV
Input current II VI = -5V -880 A
Output current (OFF) IO(off) VCC = -50V, VI = 0V -500 nA
DC current gain GI VO = -5V, IO = -5mA 30 -
Input resistance R1 10 k
Resistance ratio R2/R1 0.8 1.0 1.2 -
Transition frequency fT*1 VCE = -10V, IE = 5mA, f = 100MHz 250 MHz

1806030051_ROHM-UMB11NTN_C123066.pdf

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