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quality ROHM UMA1NTR Digital Transistor Optimized for Compact SMT Package and Driver Circuit Applications factory
quality ROHM UMA1NTR Digital Transistor Optimized for Compact SMT Package and Driver Circuit Applications factory

ROHM UMA1NTR Digital Transistor Optimized for Compact SMT Package and Driver Circuit Applications

Key Attributes
Model Number: UMA1NTR
Product Custom Attributes
Number:
2 PNP Pre-Biased Transistors
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMA1NTR
Package:
TSSOP-5(SC-70-5)SOT-353
Product Description

Product Overview

The UMA1N and FMA1A are common-emitter dual digital transistors designed for inverter, interface, and driver applications. These devices integrate two DTA124E chips into a single UMT or SMT package, offering significant advantages in reduced mounting cost and board space. They are ideal for applications requiring efficient digital signal control and amplification.

Product Attributes

  • Brand: ROHM
  • Product Line: UMA1N / FMA1A

Technical Specifications

Model Package Package Size (mm) Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking
UMA1N SOT-353 (UMT5) 2021 TR 180 8 3000 A1
FMA1A SOT-25 (SMT5) 2928 T148 180 8 3000 A1
Parameter Symbol Values Unit
Supply voltage VCC -50 V
Input voltage VIN -40 to 10 V
Output current IO -30 mA
Collector current (MAX.) IC(MAX.) -100 mA
Power dissipation UMA1N PD*2*3 150 mW/Total
FMA1A PD*2*4 300 mW/Total
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
Parameter Symbol Conditions Min. Typ. Max. Unit
Input voltage (OFF) VI(off) VCC = -5V, IO = -100A - - -0.5 V
Input voltage (ON) VI(on) VO = -0.2V, IO = -5mA -3.0 - - V
Output voltage (ON) VO(on) IO = -10mA, II = -0.5mA - -100 -300 mV
Input current II VI = -5V - - -360 A
Output current (OFF) IO(off) VCC = -50V, VI = 0V - - -500 nA
DC current gain GI VO = -5V, IO = -5mA 56 - - -
Input resistance R1 R1 - 15.4 22 28.6 k
Resistance ratio R2/R1 R2/R1 - 0.8 1.0 1.2 -
Transition frequency fT*1 VCE = -10V, IE = 5mA, f = 100MHz - 250 - MHz

*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.


2504161211_ROHM-UMA1NTR_C17525669.pdf

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