Digital transistor ROHM DTD113ZCT116 featuring integrated resistors for inverter and interface circuit applications

Key Attributes
Model Number: DTD113ZCT116
Product Custom Attributes
DC Current Gain:
82@50mA,5V
Operating Temperature:
-40℃~+150℃
Current - Collector(Ic):
500mA
Output Voltage(VO(on)):
300mV
Input Resistor:
1kΩ
Resistor Ratio:
10
Number:
1 NPN (Pre-Biased)
Pd - Power Dissipation:
200mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTD113ZCT116
Package:
SOT-23
Product Description

Product Overview

The DTD113ZC is a digital transistor featuring built-in biasing resistors (R1 = 1k, R2 = 10k) within a SOT-23 package. This integrated design simplifies circuit configuration, enabling inverter circuits without external input resistors. It is ideal for applications requiring easy on/off condition setting, such as inverters, interfaces, and drivers. A complementary PNP type, DTB113ZC, is also available.

Product Attributes

  • Brand: ROHM
  • Package: SOT-23 (SST3)

Technical Specifications

Parameter Symbol Conditions Value Unit
Supply voltage VCC 50 V
Collector current (max.) IC(MAX.) 500 mA
Resistor R1 R1 1k
Resistor R2 R2 10k
Input voltage (off) VI(off) VCC = 5V, IO = 100A - 0.3 V
Input voltage (on) VI(on) VO = 0.3V, IO = 20mA 1.5 -
Output voltage (on) VO(on) IO = 50mA, II = 2.5mA - 100 300 mV
Input current II VI = 5V - 7.2 mA
Output current (off) IO(off) VCC = 50V, VI = 0V - 500 nA
DC current gain GI*3 VO = 5V, IO = 50mA 82 -
Input resistance R1 - 0.7 1 1.3 k
Resistance ratio R2/R1 - 8 10 12 -
Transition frequency fT*1 VCE = 10V, IE = -50mA, f = 100MHz - 200 - MHz
Power dissipation PD*2 (Ta = 25C) 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
Package size SOT-23 (SST3) 2924
Reel size 180 mm
Tape width 8 mm
Basic ordering unit (pcs) 3000 pcs
Taping code T116

2212231008_ROHM-DTD113ZCT116_C5336624.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.